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Molecular Beam Epitaxial Growth of InAs/AIGaAsSb Deep Quantum Wells on GaAs Substrates

Published online by Cambridge University Press:  21 February 2011

N. Kuze ,
H. Goto ,
S. Miya ,
S. Muramatsu ,
M. Matsui  and
I. Shibasaki
N. Kuze
Affiliation:
a8212678@ut.asahi-kasei.co.jp
H. Goto
Affiliation:
Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2–1, Samejima, Fuji, Shizuoka, 416, Japan
S. Miya
Affiliation:
Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2–1, Samejima, Fuji, Shizuoka, 416, Japan
S. Muramatsu
Affiliation:
Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2–1, Samejima, Fuji, Shizuoka, 416, Japan
M. Matsui
Affiliation:
Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2–1, Samejima, Fuji, Shizuoka, 416, Japan
I. Shibasaki
Affiliation:
Central Laboratory, Asahi Chemical Ind., Co., Ltd., 2–1, Samejima, Fuji, Shizuoka, 416, Japan
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Abstract

We have investigated InAs deep quantum well structures (InAs DQWs) made from InAs/A1GaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice-matched to InAs. Using reflection high-energy electron diffraction (RHEED) linescan image analysis, we show that AlGaAsSb on GaAs surfaces quickly relaxes within 3 to 7 monolayers (MLs). The initial stages of AlxGa1-xAsSb (0≤x≤0.5) growth on GaAs (100) substrates and InAs growth on AlGaAsSb layers have been investigated by atomic force microscopy. The ridgeline shapes of AlGaAsSb are observed at the initial stage on GaAs surfaces. In the interface of the InAs/AIGaAsSb, two-dimensional (2D) growth of InAs has been observed. With a thin buffer layer of 600 nm AlGaAsSb, we have achieved very high electron mobilities of more than 32000 cm2/V-s at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 165
Copyright
Copyright © Materials Research Society 1996

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References

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