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Molecular Beam Epitaxial Growth Over Multiple Wafers Using an Indium-Free Mounting Technique

Published online by Cambridge University Press:  26 February 2011

T. Igarashi
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
J. Saito
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
Y. Okamoto
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
T. Ishikawa
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
K. Kondo
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
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Abstract

An indium-free substrate mounting technique was developed for a 190-mm diameter substrate holder on which three 3-inch GaAs substrates are mounted. Reduction of the heat conduction between the substrates and the holder kept the temperature variation in the substrate within ±5° C. Highly uniform epitaxial layers were grown with low residual impurity concentrations using this technique. The variations in layer thickness and carrier concentration of Si-doped GaAs and AlGaAs epitaxial layers were within ±1% over the substrate holder. High mobility of a two-dimensional electron gas in a selectively doped GaAs/N-AlGaAs heterostructure was obtained uniformly over three 3-inch wafers. Since the holder was designed to hold the wafers without stress, no stress-related degradation of the surface morphology was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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