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Monocrystalline Si Films from Transfer Processes for Thin Film Devices

Published online by Cambridge University Press:  17 March 2011

Ralf B. Bergmann ,
Christopher Berge ,
Titus J. Rinke  and
Jürgen H. Werner
Ralf B. Bergmann
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Christopher Berge
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Titus J. Rinke
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
Jürgen H. Werner
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

The transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation of quasi-monocrystalline Si-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D2.1.1
Copyright
Copyright © Materials Research Society 2001

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