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Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

Published online by Cambridge University Press:  31 January 2011

Eric Tea  and
Frederic Aniel
Eric Tea
Affiliation:
eric.tea@u-psud.frerc_t@yahoo.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
Frederic Aniel
Affiliation:
frederic.aniel@u-psud.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
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Abstract

The Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

Keywords

electronic materialIII-Vphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1230: Symposium MM – Ultrafast Processes in Materials Science , 2009 , 1230-MM06-05
Copyright
Copyright © Materials Research Society 2010

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