Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-10T14:26:09.265Z Has data issue: false hasContentIssue false

Morphology control of copper indium disulfide nanocrystals

Published online by Cambridge University Press:  19 July 2011

Marta Kruszynska
Affiliation:
University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg, Germany
Holger Borchert
Affiliation:
University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg, Germany
Jürgen Parisi
Affiliation:
University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg, Germany
Joanna Kolny-Olesiak
Affiliation:
University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg, Germany
Get access

Abstract

In this report, we present a hot-injection strategy for the synthesis of CuInS2 (CIS) nanocrystals with hexagonal, pyramidal and nanorod shapes. For that purpose copper (I) and indium (III) acetates were dissolved in oleylamine as a high-boiling solvent. Tert-dodecanethiol (t-DDT) was used as a sulfur source. It was mixed with 1-dodecanothiol (1-DDT) and injected at a high temperature. The presence of the second dodecanethiol was necessary to control the growth of the synthesized nanocrystals. We observed a strong influence of the t-DDT amount on the morphology of the CIS nanocrystals. By the variation of the injected solution uniform CIS nanorods with different aspect ratio and size were obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Murray, C. B., Norris, D. J. and Bawendi, M. G., J. Am. Chem. Soc. 115, 8706 (1993).Google Scholar
2. Alivisatos, A.P., Science 271, 933 (1996).Google Scholar
3. Peng, Z.A. and Peng, X., J. Am. Chem. Soc. 123, 183 (2001).Google Scholar
4. Du, H., Chen, C., Krishnan, R., Krauss, T.D., Harbold, J.M., Wise, F.W., Thomas, M.G. and Silcox, J., Nano Lett. 2, 1321 (2002) .Google Scholar
5. Courtel, F.M., Hammami, A., Imbeault, R., Hersant, G., Paynter, R.W., Marsan, B. and Morin, M., Chem. Mater. 22, 3752 (2010).Google Scholar
6. Pan, D., An, L., Sun, Z., Hou, W., Yang, Y., Yang, Z. and Lu, Y., J. Am. Chem. Soc. 130, 5620 (2008).Google Scholar
7. Klenk, R., Blieske, U., Dieterle, V., Ellmer, K., Fiechter, S., Hengel, I., Jäger-Waldau, A., Kampschulte, T., Kaufmann, C., Klaer, J., Lux-Steiner, M.C. Hariskos, D., Ruckh, M. and Schock, H.W., Sol. Energ. Mat. Sol. C. 49, 349 (1997).Google Scholar
8. Tell, B., Shay, J.L., Kasper, H.M., Phys. Rev. B 4, 2463 (1971).Google Scholar
9. Kruszynska, M., Knipper, M., Kolny-Olesiak, J., Borchert, H. and Parisi, J., Thin Solid Films ( in press).Google Scholar
10. Li, L., Daou, T. J., Texier, I., Kim Chi, T. T., Liem, N.Q. and Reiss, P., Chem. Mater. 21, 2422 (2009).Google Scholar
11. Xie, R., Rutheford, M. and Peng, X., J. Am. Chem. Soc. 131, 5691 (2009).Google Scholar
12. Xiao, J.P., Xie, Y., Tong, R. and Qian, Y.T., J. Solid State Chem. 161, 179 (2001).Google Scholar
13. Castro, S.L., Bailey, S.G., Raffaelle, R.P., Banger, K.K. and Hepp, A.F., J. Phys. Chem. B. 108, 12429 (2004).Google Scholar
14. Binsma, J.J.M., Giling, L.J., and Bloem, J., J. Cryst. Growth 50, 429 (1980).Google Scholar
15. Nose, K., Soma, Y., Omata, T. and Otsuka-Yao-Matsuo, S., Chem. Mater. 13, 2607 (2009).Google Scholar
16. Batabyal, S.K., Tian, L., Venkatram, N., Ji, W. and Vittal, J.J., J. Phys. Chem. C 113, 15037 (2009).Google Scholar
17. Pan, D., An, L., Sun, Z., Hou, W., Yang, Y., Yang, Z. and Lu, Y., J. Am. Chem. Soc. 130, 5620 (2008).Google Scholar
18. Kruszynska, M., Borchert, H., Parisi, J. and Kolny-Olesiak, J., J. Am. Chem. Soc. 132, 15976 (2010).Google Scholar
19. Choi, S.H., Kim, E.G. and Hyeon, T., J. Am. Chem. Soc. 128, 2520 (2006).Google Scholar
20. Qi, Y., Liu, Q., Tang, K., Liang, Z., Ren, Z. and Liu, X., J. Phys. Chem. C 113, 3939 (2009).Google Scholar
21. Rincon, C., Phys. Rev. B45, 12716 (1992).Google Scholar