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Mott-memories Based on the Narrow Gap Mott Insulators AM4Q8 (A=Ga, Ge ; M = V, Nb, Ta ; Q = S, Se)

Published online by Cambridge University Press:  03 May 2013

L. Cario ,
E. Janod ,
J. Tranchant ,
P. Stoliar ,
M. Rozenberg ,
M.-P. Besland  and
B. Corraze
L. Cario*
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
E. Janod
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
J. Tranchant
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
P. Stoliar
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France ECyT, Universidad Nacional de San Martín, Campus Miguelete, 1650 San Martin, Argentina.
M. Rozenberg
Affiliation:
Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France
M.-P. Besland
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
B. Corraze
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
*
*Email : laurent.cario@cnrs-imn.fr
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Abstract

The narrow gap Mott insulators AM4Q8 (A = Ga, Ge; M= V, Nb, Ta; Q = S, Se) exhibit very interesting electronic properties when pressurized or chemically doped. We have recently discovered that the application of short electrical pulses on these compounds induces a new phenomenon of volatile or nonvolatile resistive switching. The volatile transition appears above threshold electric fields of a few kV/cm, while for higher electric fields, the resistive switching becomes non-volatile. The application of successive very short electric pulses enables to go back and forth between the high and low resistance states. All our results indicate that the resistive switching discovered in the GaM4Q8 compounds does not match with any previously described mechanisms. Conversely, our recent work shows that the volatile resistive switching is related to a purely electronic mechanism which suggests that the AM4Q8 compounds belong to a new class of Mott-memories for which Joule heating, thermochemical or electrochemical effects are not involved. Finally, it is possible to deposit a thin layer of GaV4S8 and to retrieve the reversible resistive switching on a metal-insulator-metal (MIM) device which proves the potential of this new class of Mott-memories for applications.

Keywords

metal-insulator transitionelectrical propertiesmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd15-01
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

International Technology Roadmap for Semiconductors, Emerging Research Devices (2011) - http://www.itrs.net/ Google Scholar
Waser, R. and Aono, M., Nature Materials 6, 833 (2007)CrossRefGoogle Scholar
Oka, T., Arita, R., and Aoki, H., Phys. Rev. Lett. 91, 066406 (2003).CrossRefGoogle Scholar
Oka, T. and Aoki, H., Phys. Rev. Lett. 95, 137601 (2005).CrossRefGoogle Scholar
Ben Yaich, H., Jegaden, J. C., Potel, M., Sergent, M., Rastogi, A. K., Tournier, R., J. Less-Common Met. 102, 9 (1984).CrossRefGoogle Scholar
Pocha, R., Johrendt, D., Ni, B., Abd-Elmeguid, M. M., J. Am. Soc. Chem. 127, 8732 (2005).CrossRefGoogle Scholar
Vaju, C., Martial, J., Janod, E., Corraze, B., Fernandez, V. and Cario, L., Chem. Mater. 20, 2382 (2008).CrossRefGoogle Scholar
Dorolti, E., Cario, L., Corraze, B., Janod, E., Vaju, C., Koo, H.-J., Kan, E., Whangbo, M.-H., J. Am. Chem. Soc. 132, 5704 (2010)CrossRefGoogle Scholar
Abd-Elmeguid, M.M., Ni, B., Khomskii, D. I., Pocha, R., Johrendt, D., Wang, X., and Syassen, K., Phys. Rev. Lett. 93, 126403 (2004).CrossRefGoogle Scholar
Vaju, C., Cario, L., Corraze, B., Janod, E., Dubost, V., Cren, T., Roditchev, D., Braithwaite, D., Chauvet, O., Advanced Materials 20, 2760 (2008).CrossRefGoogle Scholar
Dubost, V., Cren, T., Vaju, C., Cario, L., Corraze, B., Janod, E., Debontridder, F., Roditchev, D., Adv. Func. Mat. 19, 2800 (2009).CrossRefGoogle Scholar
Vaju, C., Cario, L., Corraze, B., Janod, E., Dubost, V., Cren, T., Roditchev, D., Braithwaite, D., Chauvet, O., Microelectronic Engineering 85, 2430 (2008).CrossRefGoogle Scholar
Cario, L., Vaju, C., Corraze, B., Guiot, V., Janod, E., Advanced Materials 22, 5193 (2010)CrossRefGoogle Scholar
Levinshtein, M. et al. . “Breakdown Phenomena in Semiconductors and Semiconductor Devices”, World Scientific Publishing Co. Pte. Ltd., Singapore (2005)CrossRefGoogle Scholar
Hudgins, J. L. et al. ., IEEE Transactions on Power Electronics 18, 907–914 (2003).CrossRefGoogle Scholar
Hudgins, J. L., and Wide, J., Journal of Electronic Materials 32, 471 (2003).CrossRefGoogle Scholar
Guiot, V. et al. . Chemistry of Materials 23, 2611–2618 (2011) ; V. Guiot, et al. Nature Communication, accepted (2013).CrossRefGoogle Scholar
Souchier, E., Cario, L., Corraze, B., Moreau, P., Mazoyer, P., Estournès, C., Retoux, R., Janod, E., Besland, M.-P., Phys. Status Solidi RRL 5, 53 (2011) ; E. Souchier, L. Cario, B. Corraze, C. Estournès, V. Fernandez, T. Skotnicki, P. Mazoyer, E. Janod, M.-P. Besland, Memory Workshop, 2009. IMW '09. IEEE International (Monterey 2009) doi: 10.1109/IMW.2009.5090608 CrossRefGoogle Scholar
Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J.-L., Cremillieu, P., Moreau, P., Besland, M.-P., Thin Solid Films, in press (2012) doi: 10.1016/j.tsf.2012.10.104 Google Scholar