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MOVPE of m-plane InGaN/GaN Buffer and LED Structures on γ-LiAlO2

Published online by Cambridge University Press:  01 February 2011

H. Behmenburg ,
C. Mauder ,
L. Rahimzadeh Khoshroo ,
T.C. Wen ,
Y. Dikme ,
M.V. Rzheutskii ,
E.V. Lutsenko ,
G.P. Yablonskii ,
M.M.C. Chou  and
J. Woitok
...Show all authors
H. Behmenburg
Affiliation:
h.behmenburg@aixtron.com, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
C. Mauder
Affiliation:
cm@ithe.rwth-aachen.de, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
L. Rahimzadeh Khoshroo
Affiliation:
lk@ithe.rwth-aachen.de, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
T.C. Wen
Affiliation:
tcw@ithe.rwth-aachen.de, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
Y. Dikme
Affiliation:
y.dikme@aixtron.com, AIXTRON AG, Aachen, Germany
M.V. Rzheutskii
Affiliation:
yablon@dragon.bas-net.by, National Academy of Sciences of Belarus, Stepanov Institute of Physics, Minsk, N/A, Belarus
E.V. Lutsenko
Affiliation:
e.lutsenko@ifanbel.bas-net.by, National Academy of Sciences of Belarus, Stepanov Institute of Physics, Minsk, N/A, Belarus
G.P. Yablonskii
Affiliation:
yablon@dragon.bas-net.by, National Academy of Sciences of Belarus, Stepanov Institute of Physics, Minsk, N/A, Belarus
M.M.C. Chou
Affiliation:
mitch@faculty.nsysu.edu.tw, National Sun Yat-Sen University, Kaohsiung, N/A, Taiwan
J. Woitok
Affiliation:
joachim.woitok@panalytical.com, PANalytical B.V., Almelo, N/A, Netherlands
M. Heuken
Affiliation:
m.heuken@aixtron.com, AIXTRON AG, Aachen, Germany
H Kalisch
Affiliation:
hk@ithe.rwth-aachen.de, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
R.H. Jansen
Affiliation:
rhj@ithe.rwth-aachen.de, RWTH Aachen, Chair of Electromagnetic Theory, Aachen, 52074, Germany
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Abstract

We report on deposition and properties of m-plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapor phase epitaxy (MOVPE). At first, two different buffer structures, one of them including an m-plane AlInN interlayer, were investigated concerning their suitability for the subsequent coalesced single-phase m-plane GaN growth. A series of quantum well structures with different well thickness based on one of these buffers showed absence of polarization-induced electric fields verified by room temperature photoluminescence (RT PL) measurements at different excitation intensities. Furthermore, polarization-resolved PL measurements revealed a high degree of polarization (DoP) of the emitted light with an intensity ratio of 8:1 between light polarized perpendicular and parallel to the c-axis.

Keywords

nitrideepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C05-04
Copyright
Copyright © Materials Research Society 2008

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References

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