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Multilayer Metallization Structures in a Gate Array Device Shown by Cross-Sectional Transmission Microscopy

Published online by Cambridge University Press:  25 February 2011

S. F. Gong ,
H. T. G. Hentzell  and
A. Robertsson
S. F. Gong
Affiliation:
Department of Physics and Measurement Technology, University of Linköping S-581 83 Linköping, Sweden
H. T. G. Hentzell
Affiliation:
Department of Physics and Measurement Technology, University of Linköping S-581 83 Linköping, Sweden
A. Robertsson
Affiliation:
Department of Physics and Measurement Technology, University of Linköping S-581 83 Linköping, Sweden
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Abstract

A multilayer metallization structure in a gate array circuit has been investigated by cross-sectional transmission electron microscopy. Microstructures of thin films, interfaces, contacts, dislocations and step coverage are revealed. Good step coverage was observed when polyimide was used as an insulator between two metal layers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 487
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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3. Gong, S. F., Hentzell, H. T. G., Robertsson, A., and Radnoczi, G., IEE-G 137, 53 (1990).Google Scholar