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Multi-Stacked Flip Chips with Copper Plated Through Silicon Vias and Re-distribution for 3D System-in-Package Integration

Published online by Cambridge University Press:  26 February 2011

Shi-Wei Ricky Lee  and
Ronald Hon
Shi-Wei Ricky Lee
Affiliation:
rickylee@ust.hk, Hong Kong University of Science & Technology, Mechanical Engineering, Clear Water Bay, Kowloon, 00000, Hong Kong, 85223587203, 85223581543
Ronald Hon
Affiliation:
meronald@ust.hk, Hong Kong University of Science and Technology, Electronic Packaging Laboratory, Center for Advanced Microsystems Packaging, Clear Water Bay, Kowloon, 00000, Hong Kong
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Abstract

The study is a prototype design and fabrication of multi-stacked flip chip three dimensional packaging (3DP) with TSVs for interconnection. Three chips are stacked together to make a 3DP with solder bumped flip chips. TSVs are fabricated and distributed along the periphery of the middle chip. The TSVs are formed by dry etching, deep reactive ions etching (DRIE), with dimensions of 150 × 100 microns. The TSVs are plugged by copper plating. The filled TSVs are connected to the solder pads by extended pad patterns surrounding the top and the bottom of TSVs on both sides of the wafer for the middle chip. After pad patterning passivation and solder bumping, the wafer is sawed into chips for subsequent 3D stacked die assembly. Because the TSVs are located at the periphery of the middle chips and stretch across the saw street between adjacent chips, they will be sawed through their center to form two open TSVs (with half of the original size) for electrical interconnection between the front side and the back side of the middle chip. The top chip is made by the conventional solder bumped flip chip processes and the bottom chip is a carrier with some routing patterns. The three middle chips and top chip are stacked by a flip chip bonder and the solder balls are reflowed to form the 3DP structure. Lead-free soldering and wafer thinning are also implemented in this prototype. In addition to the conceptual design, all wafer level fabrication processes are described and the subsequent die stacking assembly is also presented.

Keywords

packagingSiCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 970: Symposium Y – Enabling Technologies for 3-D Integration , 2006 , 0970-Y05-04
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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