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Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory

Published online by Cambridge University Press:  16 March 2012

D. Loke ,
L. P. Shi ,
W. J. Wang ,
R. Zhao ,
L. T. Ng ,
K. G. Lim ,
H. X. Yang ,
T. C. Chong  and
Y. C. Yeo.
D. Loke
Affiliation:
NUS Graduate School for Integrative Sciences & Engineering, 28 Medical Drive, Centre for Life Sciences #05-01, Singapore 117456. Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
L. P. Shi*
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
W. J. Wang
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
R. Zhao
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
L. T. Ng
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
K. G. Lim
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
H. X. Yang
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.
T. C. Chong
Affiliation:
Singapore University of Technology & Design, 287 Ghim Moh Road, Singapore 279623.
Y. C. Yeo.
Affiliation:
Department of Electrical & Computer Engineering, National University of Singapore, 1 Engineering Drive 3, Singapore 117576.
*
*To whom correspondence should be addressed. Email: shi_luping@dsi.a-star.edu.sg
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Abstract

Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.

Keywords

devicesdielectricthermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1404: Symposium W – Phonons in Nanomaterials–Theory, Experiments and Applications , 2012 , mrsf11-1404-w09-05
Copyright
Copyright © Materials Research Society 2012

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References

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