Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-15T01:05:27.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanofabrication of High-resolution and Nanofocusing X-ray Optics Based on Silicon and Diamond: Obstacles and Progress

Published online by Cambridge University Press:  01 February 2011

Abdel F. Isakovic ,
K. Evans-Lutterodt ,
A. Stein ,
J. B. Warren ,
S. Narayanan  and
A. R. Sandy
Abdel F. Isakovic
Affiliation:
isakovic@bnl.govafisakovic@gmail.com, Brookhaven National Laboratory, NSLS, Upton, New York, United States
K. Evans-Lutterodt
Affiliation:
kenne@bnl.gov, Brookhaven National Laboratory, NSLS, Upton, New York, United States
A. Stein
Affiliation:
stein@bnl.gov, Brookhaven National Laboratory, CFN, Upton, New York, United States
J. B. Warren
Affiliation:
warren@bnl.gov, Brookhaven National Laboratory, ID, Upton, New York, United States
S. Narayanan
Affiliation:
sureshn@aps.anl.gov, Argonne National Laboratory, APS, Argonne, Illinois, United States
A. R. Sandy
Affiliation:
asandy@aps.anl.gov, Argonne National Laboratory, APS, Argonne, Illinois, United States
Get access

Abstract

Nanofocusing, high-resolution X-ray optics demand good surface quality, the absence of tapered sidewalls, and a depth reaching into tens, sometimes hundreds of microns, all requirements that must be satisfied over large areas. In this report, we discuss our motivation for choosing group IV materials (predominantly Si, and C in its diamond form) for nanofocusing and high resolution in the hard X-ray portion of the spectrum. We elaborate on the design and nanofabrication procedures, and detail the etching parameters that offer a path for overcoming obstacles in making better optics. We briefly review tests for the assessing the quality of the optics.

Keywords

optical propertiesx-ray diffraction (XRD)nanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1145: Symposium MM – Application of Group IV Semiconductor Nanostructures , 2008 , 1145-MM04-39
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] See, for example, the following link: http://www.bnl.gov/nsls2. Google Scholar
[2] Isakovic, A. F., Evans-Lutterodt, K., Stein, A. et al., J. Vac. Sci. Technol. A 26, 1182, (2008).Google Scholar
[3] Smedley, J., Ben-Zvi, I., Burrill, A., et al., Mat. Res. Soc. Symp. Proc. 1039, P–09 (2007).Google Scholar
[4] Suehiro, S., Miyaji, H., and Hayashi, H., Nature 352, 385 (1991).Google Scholar
[5] Lengeler, B., Tummler, J., Snigirev, A. et al., J. Appl. Phys. 84, 5855 (1998).Google Scholar
[6] Aristov, V., Grigoriev, , Kuznetsov, S., et al., Appl. Phys. Lett. 77, 4058 (2000).Google Scholar
[7] Evans-Lutterodt, K., Ablett, J. M., Stein, A. et al., Proceedings of SPIE, vol. 5539, 73 (2004).Google Scholar
[8] Moreno, , Roman, J. F. and Salgueiro, J. R., Am. J. Phys. 65, 556–562 (1997).Google Scholar
[9] See, for example, the following link: http://Physics.nist.gov/PhysRefData/. Google Scholar
[10] The Bosch process is patented and developed by Robert Bosch GmbH.Google Scholar
[11] Isakovic, A. F., Stein, A., Warren, J. B., et al., to appear in J. Synchr. Rad. 16 (2009).Google Scholar