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Nanomechanical Characterization on Zinc and Tin Oxides Nanobelts

Published online by Cambridge University Press:  11 February 2011

Minhua Zhao ,
Scott Mao ,
Zhong Lin Wang ,
Fengting Xu  and
John A Barnard
Minhua Zhao
Affiliation:
Department of Mechanical Engineering, Univ. of Pittsburgh, Pittsburgh, PA 15261
Scott Mao
Affiliation:
Department of Mechanical Engineering, Univ. of Pittsburgh, Pittsburgh, PA 15261
Zhong Lin Wang
Affiliation:
School of Materials Sci. & Engr., George Institute of Technology, Atlanta, GA 30332–0245
Fengting Xu
Affiliation:
Department of Materials Sci. & Engr., Univ. of Pittsburgh, Pittsburgh, PA 15261
John A Barnard
Affiliation:
Department of Materials Sci. & Engr., Univ. of Pittsburgh, Pittsburgh, PA 15261
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Abstract

Nanobelts are a group of materials that have a rectangle-like cross section with typical widths of several hundred nanometers, width-to-thickness ratios of 5 to 10, and lengths of hundreds of micron meters. In this paper, nanoindentations were made on individual ZnO, SnO2 nanobelts and (0001) bulk ZnO by using AFM and Hysitron Triboscope indenters. It was shown that the indentation size effect was still obvious for the indentation depth under 50 nm. It is also demonstrated that nanomaching is possible on nanobelt using AFM tip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 740: Symposium I – Nanomaterials for Structural Applications , 2002 , I9.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCE

1. Pan, Zheng Wei, Dai, Zurong and Wang, Zhong Lin et al, Nanobelts of Semiconducting Oxides, Science, 9 March 2001, pp. 1947–9.Google Scholar
2. Dai, Z.R., Pan, Z.W. and Wang, Z.L., Solid State communications 118 (2001), 351–354.Google Scholar
3. Pan, Z.W., Dai, Z.R. and Wang, Z.L., Applied Physics Letters, Vol. 80 No.2, January 2002, P. 309 Google Scholar
4. Mao, Scott, Zhao, M., and Wang, Zhong Lin, MRS 2002 fall Symposium F: Semiconductor Materials and Devices, Boston Dec. 2–6, 2002.Google Scholar
5. Duan, D. M., Wu, N., Slaughter, W.S., Mao, S.X., Mat. Sci. & Eng. A. A303 (2001) 241–249.Google Scholar
6. Ennis, B. M., Slaughter, W., Madan, Anita and Mao, S.X., submitted to Acta Materialia.Google Scholar