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The nature of islanding in the InGaAs / GaAs epitaxial system

Published online by Cambridge University Press:  17 March 2011

T. Walther ,
A.G. Cullis ,
D. J. Norris  and
M. Hopkinson
T. Walther
Affiliation:
Institut für Anorganische Chemie, Universität Bonn, Römerstraβe 164, 53117 Bonn, Germany
A.G. Cullis
Affiliation:
Dept. Electronic and Electrical Eng., University of Sheffield, Mappin St., Sheffield S1 3JD, UK
D. J. Norris
Affiliation:
Dept. Electronic and Electrical Eng., University of Sheffield, Mappin St., Sheffield S1 3JD, UK
M. Hopkinson
Affiliation:
Dept. Electronic and Electrical Eng., University of Sheffield, Mappin St., Sheffield S1 3JD, UK
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Abstract

The interest in the phenomenon of islanding in a range of semiconductor systems is in part due to the fundamental importance of the Stranski-Krastanow transition but also driven by potential device applications of self-organized quantum dot arrays. However, the mechanism underlying the island formation is still to a significant degree unclear. In the present work, we focus on the epitaxial InGaAs / GaAs(001) system, with layer deposition by molecular beam epitaxy. Atomic force microscopy is used to measure the surface topography of nominally 4nm thick InxGa1-xAs films. It is shown that the growth mode switches abruptly from flat layer to island growth if a critical Indium composition of x(In)≍0.25 is reached. The structure of such layers during early stages of growth is examined using energy-filtered transmission electron microscopy. Indium gradients in the islanded layers are measured and the driving force for the islanding transition itself is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P12.6
Copyright
Copyright © Materials Research Society 2001

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