Article contents
The nature of ripples and islands in strained SiGe/Si heteroepitaxy: nucleation vs. instability phenomena
Published online by Cambridge University Press: 10 February 2011
Abstract
Using liquid phase epitaxy from Bi solution in the temperature range 550°–700°C at low growth rates we study the formation of ripples and islands and their interdependence. As main results we find from the dependencies on growth time and temperature that ripples are an instability phenomenon and that islands nucleate thermally activated. Island nucleation on a ripple template (that is, as an instability phenomenon, highly ordered) has huge impact on the achievable order of the islands.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1999
References
REFERENCES
- 2
- Cited by