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N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy

Published online by Cambridge University Press:  15 February 2011

P. L. Huang ,
K. Seastrand ,
K. E. Violette ,
J. Wolf  and
M. C. Öztürk
P. L. Huang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
K. Seastrand
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
K. E. Violette
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
J. Wolf
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Box 7907, Raleigh, NC 27695–7907, USA
M. C. Öztürk
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
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Abstract

In this paper, we present an application of ultra high Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) to MOSFET channel engineering. MOSFETs were fabricated on ultra-thin (200 Å), moderately doped (l×1017 - 6×1018 cm−3) p-type epitaxial layers selectively grown in active areas defined by standard LOCOS isolation. The selective epitaxy was achieved using a novel Si2H6Cl2/B2H6 process at 800°C and at a total pressure under 30 mtorr. Low thermal budget processing techniques were emphasized to minimize spread in the channel doping profile. Threshold voltages below 0.6 V were obtained. Transistors with effective channel lengths of 0.45 μm exhibit subthreshold slopes from 78 to 92 mV/decade determined by the epitaxial channel doping density. We have found that by using ultra-thin channels, expected transconductance degradation at high channel doping densities can be minimized. Furthermore, ultra-thin channels help reduce the sensitivity of the threshold voltage on substrate bias. The results show that low temperature selective silicon epitaxy can be used to form ultra-shallow channel doping profiles that can enhance the performance of MOSFETs in the deep submicron regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 347
Copyright
Copyright © Materials Research Society 1995

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