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Near Bandgap Optical Absorption Measurements on InGaAs/InP Strained Layers with Coarse Structure

Published online by Cambridge University Press:  25 February 2011

P. Roura ,
J. Bosch ,
A. Cornet ,
F. Peiroi ,
J.R. Morante ,
S. A. Clark  and
R.H. Williams
P. Roura
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 028028 Barcelona, Spain
J. Bosch
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 028028 Barcelona, Spain
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 028028 Barcelona, Spain
F. Peiroi
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 028028 Barcelona, Spain Serveis Científico-Tècnics. Univ. Barcelona. Lluís Solé i Sabarís, 1-3. 08028
J.R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 028028 Barcelona, Spain
S. A. Clark
Affiliation:
Barcelona, Spain. Dept. of Physics and Astronomy, Univ. of Wales, College of Cardiff. P.O. Box 913, Cardiff, Wales, U.K.
R.H. Williams
Affiliation:
Barcelona, Spain. Dept. of Physics and Astronomy, Univ. of Wales, College of Cardiff. P.O. Box 913, Cardiff, Wales, U.K.
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Abstract

Optical absorption measurements have been carried out on compressive InGaAs/FInP strained layers. It is shown that thoptical absorption analysis is a powerful technique in order to study the inhomogeneities of strained layers. The energetic dispersion of the heavy hole relative to the light hole subband σHH/σLH is related with the presence of the coarse structure seen in Transmission Electron Microscopy observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 353
Copyright
Copyright © Materials Research Society 1992

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References

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