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Neutron Depth Profiles of Boron Implanted Semiconductors

Published online by Cambridge University Press:  21 February 2011

Robert C. Bowman Jr. ,
John F. Knudsen  and
R. Gregory Downing
Robert C. Bowman Jr.
Affiliation:
The Aerospace Corporation, Laboratory Operations, P.O. Box 92957, Los Angeles, CA 90009
John F. Knudsen
Affiliation:
The Aerospace Corporation, Laboratory Operations, P.O. Box 92957, Los Angeles, CA 90009
R. Gregory Downing
Affiliation:
National Institute for Standards and Technology, Center for Analytical Chemistry, Gaithersburg, MD 20899
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Abstract

The nondestructive neutron depth profile (NDP) technique has been used to measure boron (10B) distributions in Si and Hg0.7Cd0.3 Te after multiple energy ion implants. The NDP results are compared with simulations generated by TRIM and SUPREM computer codes. The influence of SiO2 films on the boron profiles was examined and the effects of thermal anneals are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 166: Symposium J – Neutron Scattering for Materials Science , 1989 , 331
Copyright
Copyright © Materials Research Society 1990

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References

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