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A New Approach Using Artificial Substrates for Growth of High-Quality Precipitate-Free HTS Thin Films, Toward Electronic Device Applications

Published online by Cambridge University Press:  01 February 2011

K. Endo
Affiliation:
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,Japan.
P. Badica
Affiliation:
Institute for Materials Research, Tohoku University, Sendai, Japan. National Institute of Materials Physics (INCDFM), Bucharest, Romania
H. Sato
Affiliation:
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
H. Akoh
Affiliation:
Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
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Abstract

High quality thin films of HTS have been grown by MOCVD on substrates with artificial steps of predefined height and width. The surface of the films grown on the steps having width equal to the ‘double of the migration length' of the atomic species depositing on the substrate is totally free of precipitates: precipitates are gathered at the step edges where the free energy is lowest. The method has several advantages: it is simple, universal (it is independent of the materials, substrates, deposition technique or application) and allows control of precipitates segregates so that the quality and growth conditions of the films are the same as for the films grown on conventional substrates. The method is expected to result in new opportunities for the device fabrication, design and performance. As an example we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown on (001) SrTiO3 single crystal substrates with artificial steps of 20 μm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Endo, K., Yamasaki, H., Misawa, S., Yoshida, S. and Kajimura, K., Nature, 355, 327 (1992).Google Scholar
2 Sato, H., Akoh, H., Nishihara, K., Aoyagi, M. and Takada, S., Jpn. J. Appl. Phys., 31 Part 2, L1044 (1992).Google Scholar