Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-15T04:26:04.031Z Has data issue: false hasContentIssue false
  • English
  • Français

New Insights into The Transport and Field-Enhancement Effects in Sol-Gel Derived Colossal Magnetoresistive Thin Films

Published online by Cambridge University Press:  15 February 2011

Kannan M. Krishnan ,
H. L. Ju ,
H.-C. Sohn ,
C. Nelson  and
A. R. Modak
Kannan M. Krishnan
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H. L. Ju
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H.-C. Sohn
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
C. Nelson
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Get access

Abstract

The transport mechanism underlying the colossal magnetoresistance (CMR) of doped manganites is not yet understood and their technological applications are limited by the high fields (∼IT) required to obtain any significant MR. Following the development of a polymeric chemical synthesis route, we have investigated the O2p unoccupied density of states in sol-gel derived Lal-xSrxMnO3 (0 < x < 0.7) thin films grown epitaxially on LaA1O3, by electron energy-loss spectroscopy at sub-eV resolution. The spectra show a distinct prepeak in the OK edge at the Fermi level, the intensity of which correlates directly with the conductivity of the film. Similar correlation was also obtained for La0.7Sr0.3MnO3-z annealed in vacuum to obtain well defined oxygen content (z) in the film. This confirms that the charge carriers in these manganese perovskites have significant oxygen 2p hole character and suggests that the “double exchange” mechanism has to be modified. In another set of experiments we have studied room-temperature field amplification effects to enhance the low-field sensitivity of La0.7Sr0.3MnO3-z films sandwiched between two thin rectangular slices of either α-Fe or Mn-Zn ferrite. This field amplification leads to an enhanced low-field MR value as high as 6% at an external field of 500 Oe which is 6 times the value observed without the amplification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 139
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. von Helmolt, R. et al, PRL 71, 2331 (1993);Google Scholar
Chahara, K. et al, APL, 63, 1990 (1993);Google Scholar
Jin, S. et. al., Science 264, 423 (1994).Google Scholar
2. Heffner, R. H. et. al., Phys. Rev. Lett. 77, 1869 (1996).Google Scholar
3. Urushibara, A. et. al. Phys. Rev. B 51, 14103 (1995).Google Scholar
4. Jonker, G. H. and Van Santen, J.H., Physica (Utrecht) 16, 337 (1950).Google Scholar
5. Ju, H.L.,et. al., Appl. Phys. Lett. 65, 2108, (1994).Google Scholar
6. de Gennes, P. G., Phys. Rev. 118, 141 (1960)Google Scholar
7. Krishnan, Kannan M., Modak, A. R., Ju, H. L. and Bandaru, P., Ceramic Microstructures ‘96, in press (1996)Google Scholar
8. Ju, H. L., Sohn, H. C and Krishnan, Kannan M., Phys. Rev. Lett., submittedGoogle Scholar
9. Hwang, H. Y., Cheong, S.-W. and Batlogg, B., Appl. Phys. Lett. 68, 3494 (1996).Google Scholar
10. Brinker, C. J. and Scherer, G. W., Sol-Gel Science: The physics and chemistry of sol-gel processing (Academic Press, Boston, 1990)Google Scholar
11. Ju, H.L. et. al, Phys. Rev. B51, 6143(1995).Google Scholar
12. Saitoh, T. et. al., Phys. Rev. B 51, 13942 (1995).Google Scholar
13. Egerton, R. F., EELS in the Electron Microscope (Plenum, New York, 1986).Google Scholar
14. Vereist, M. et. al. J. Solid State Chem. 104, 74 (1993).Google Scholar