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A new laser Printing technique for the fabrication of thin film transistors

Published online by Cambridge University Press:  10 February 2011

D. Toet
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-27 1, Livermore CA 94550 e-mail: toet1@llnl.gov
P.M. Smith
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-27 1, Livermore CA 94550
T.W. Sigmon
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-27 1, Livermore CA 94550
M.O. Thompson
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

We present a new technique for the spatially selective deposition, or “printing”, of materials such as Si and Al. This transfer is effected by irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate and coated with the material to be transferred with an excimer laser pulse. The resulting release and accumulation of hydrogen at the film/substrate interface generates pressures sufficient to propel the silicon, as well as any overlying material, onto an adjacent glass receptor wafer. Transient optical transmission measurements performed during the transfer of Si indicate that the amorphous film is melted by the laser pulse and breaks into droplets during ejection. These droplets travel towards the host substrate with a velocity of about 800 m/s and coalesce upon arrival. For fluences above 400 mJ/cm2, the resulting films adhere well to the receptors and can be smoothed using a second laser irradiation. We fabricated thin film transistors (TFTs) in the printed-and-smoothed Si using conventional lithography. The resulting devices show consistent switching behavior. We have also printed Si and Al lines with widths 5 to 15 µm by patterning the laser beam using a reflective grating mask defined on the target substrate. These lines are straight, show few discontinuities, and have sharp edges.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Bohandy, J., Kim, B.F., and Adrian, F.J., J. Appl. Phys. 60, 1538 (1986).Google Scholar
2. Adrian, F.J., Bohandy, J., Kim, B.F., Jette, A.N., and Thompson, P., J. Vac. Sci. Technol. B 5, 1490 (1987).Google Scholar
3. Téth, Z., Hopp, B., Kántor, Z., Ignácz, F., Szörényi, T., and Bor, Z., Appl. Phys. A 60, 431 (1995).Google Scholar
4. Baseman, R.J., Froberg, N.M., Andreshak, J.C., and Schlesinger, Z., Appl. Phys. Lett. 56, 1421 (1990).Google Scholar
5. Toet, D., Thompson, M.O., Smith, P.M., and Sigmon, T.W., unpublised.Google Scholar
6. Jackson, W.B. and Tsai, C.C., Phys. Rev. B 45, 6564 (1992).Google Scholar
7. Kittl, J.A., Aziz, M.J., Brunco, D.P., and Thompson, M.O., J. Cryst. Growth 148, 172 (1995).Google Scholar
8. Gmelin Handbook of Inorganic Chemistry 15 B (Verlag Chemie, Weinheim, 1959), p.69.Google Scholar
9. Peercy, P.S., Tsao, J.Y., Stiffler, S.R., and Thompson, M.O., Appl. Phys. Lett. 52, 203 (1989).Google Scholar
10. Kittel, C., Introduction to Solid State Physics (John Wiley and Sons, New York, 1976), p. 19.Google Scholar
11. Murray, J.L. and McAlister, A.J., Bull. Alloy Phase Diagrams 5 (1), 1984.Google Scholar
12. Bastawros, A.M. and Said, M.Z., J. Mat. Science 28, 1143 (1993).Google Scholar