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New Model for “Stretched Exponential” Relaxation

Published online by Cambridge University Press:  10 February 2011

Chris G. Van De Walle
Chris G. Van De Walle*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

A new model to explain stretched exponential relaxation in hydrogenated amorphous silicon is presented. The model does not invoke statistical distributions; rather, it is based on a careful treatment of diffusion, including retrapping. Excellent fits to a variety of experimental data are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 533
Copyright
Copyright © Materials Research Society 1996

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References

1. Kohlrausch, R., Ann. Phys. (Leipzig) 12, 393 (1847); F. Kohlrausch, Pogg. Ann. Phys. 199, 352 (1863).Google Scholar
2. Kakalios, J., Street, R. A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
3. Van de Walle, C. G., Phys. Rev. B (in press).Google Scholar
4 Jackson, W. B. and Kakalios, J., Phys. Rev. B 37, 1020 (1988).Google Scholar
5. Nebel, C. E., Street, R. A., Jackson, W. B., and Johnson, N. M., Philos. Mag. B 69, 291 (1994).Google Scholar
6. Zundel, T. and Weber, J., Phys. Rev. B 43, 4361 (1991).Google Scholar
7. Nickel, N. H., Johnson, N. M., and Van de Walle, C. G., Phys. Rev. Lett. 72, 3393 (1994).Google Scholar