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New Resistive Switching Phenomena in Devices with Limited Active Metal Source

Published online by Cambridge University Press:  09 May 2013

Mohini Verma ,
Yuhong Kang ,
Tanmay Potnis ,
Sushil Khadka ,
Tong Liu  and
Marius Orlowski
Mohini Verma
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Yuhong Kang
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Tanmay Potnis
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Sushil Khadka
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Tong Liu
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Marius Orlowski
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
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Abstract

To better understand the mechanisms of creation and rupture of conductive filaments in resistive switching devices such as Cu/TaOx/Pt, with Cu and Pt being the active and inert electrodes, respectively, a device with limited supply of active metal electrode has been manufactured and electrically characterized. The limited supply of active metal has been realized by depositing a thin (delta) Cu layer (δ-Cu), 6 nm and 12 nm thick, on TaOx, resulting in a Pt/δ-Cu/TaOx/Pt device structure. The limited active metal supply i) has a direct impact on the onresistance (Ron) of the Cu bridge, and leads, after several conventional set-reset cycles, to ii) pulsating behavior, when device turns on and off repeatedly, to iii) symmetric switching behavior with respect to applied voltage polarity, when the device can be set and reset both at positive and negative bias, and to iv) volatile switching behavior.

Keywords

electrodepositionnanostructuremetal-insulator transition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd08-05
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Banno, N., Sakamoto, T., Iguchi, N., Kawaura, H., Kaeriyama, S., Mizuno, M., Terabe, K., Hasegawa, T., Aono, M., IEICE Trans. Electron., vol. 869, p. 1492–98 (2006)CrossRefGoogle Scholar
Sawa, A., Materials Today, vol. 11, p.28–36(2008)CrossRefGoogle Scholar
Valov, I., et al. Nanotechnology 22(25) pp. 4003–25 (2011)CrossRefGoogle Scholar
Waser, R., and Valov, I., ECS Trans., 25(6) 431–437 (2009)CrossRefGoogle Scholar
Linn, E., Rosezin, R., Kugeler, C., and Waser, R., Nat. Mater. 9, 403 (2010)CrossRefGoogle Scholar
Sakamoto, T., Banno, N., Iguchi, N., Kawaura, H., Sunamura, H., Fujieda, S., Terabe, K., Hasegawa, T., and Aono, M., “A Ta2O5 solid-electrolyte switch with improved reliability, ” in VLSI Symp. Tech. Dig., 2007, pp. 38–39.Google Scholar
Banno, N., Sakamoto, T., Iguchi, N., Sunamura, H., Terabe, K., Hasegawa, T., and Aono, M., IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3283–3287, Nov. 2008.CrossRefGoogle Scholar
Liu, T., Verma, M., Kang, Y., and Orlowski, M., ECS Sol. State Lett. 1(1), p.Q11 (2012)CrossRefGoogle Scholar
Liu, T., Verma, M., Kang, Y., amd Orlowski, M., Appl. Phys. Lett. 101, p. 073510 (2012)CrossRefGoogle Scholar
Kang, Y., Verma, M., Liu, T., and Orlowski, M., ECS Sol. State Lett. 1(5), p.Q48 (2012)CrossRefGoogle Scholar
Liu, T., Kang, Y., El-Helw, S., Potnis, T., and Orlowski, M., “ Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices” paper accepted to this conference Google Scholar