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A New Single Source Precursor Approach to Gallium and Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

Deborah A. Neumayer ,
C.J. Carmalt ,
M.F. Arendt ,
J.M. White ,
A.H. Cowley ,
R.A. Jones  and
J.G. Ekerdt
C.J. Carmalt
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
M.F. Arendt
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
J.M. White
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
A.H. Cowley
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
R.A. Jones
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
J.G. Ekerdt
Affiliation:
Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, University of Texas, Austin, TX.
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Abstract

Single source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3(1), bisdimethylamidogallium azide, (Me2N)2GaN3(2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3(3) as potential precursors for A1N and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 °C. Increasing the substrate temperature to 580 °C resulted in the deposition of epitaxial GaN films. Polycrystalline A1N films were grown with 3 at 600 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 85
Copyright
Copyright © Materials Research Society 1996

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References

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