Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-10T10:22:48.633Z Has data issue: false hasContentIssue false

Newly Developed Low-Density Methylsiloxane Spin-On-Glass Films

Published online by Cambridge University Press:  10 February 2011

Noriko Yamada
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation 3–35–1, Ida, Nakahara-Ku, Kawasaki 211–0035, JAPAN, nyamada@labI.nsc.co.jp
Toru Takahashi
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation 3–35–1, Ida, Nakahara-Ku, Kawasaki 211–0035, JAPAN, nyamada@labI.nsc.co.jp
Get access

Abstract

Spin-on-glass (SOG) solution has been prepared from methyltriethoxysilane and dimethoxymethyl-3,3,3-trifluoropropylsilane. Trifluoropropyl groups attached to silicon are thermally decomposed by curing at 450°C in nitrogen. Since the overall methylsiloxane network is maintained without a significant shrinkage upon the thermal decomposition of trifluoropropyl groups, vacant spaces whose sizes are comparable to those of trifluoropropyl groups are introduced into the methylsiloxane network, leading to the low-density film with the Brunauer, Emmet and Teller (BET) surface area of 270 m2/g. The film shows the dielectric constant of 2.3, heat stability, low moisture uptake, good planarization property and no corrosion toward aluminum conducting lines.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. The National Technology Roadmap for Semiconductors, 1997 Edition (Semiconductor Industry Association, San Joes, CA, 1997).Google Scholar
2. Numata, K., Seha, T. R., Jeng, S.-P. and Tanaka, T., Mat. Res. Soc. Symp. Proc. 381, 255 (1995).10.1557/PROC-381-255Google Scholar
3. Nakano, T. and Ohta, T., J. Electrochem. Soc., 142, 918 (1995).10.1149/1.2048558Google Scholar
4. Hacker, N. P., Davis, G., Figge, L., Krajewski, T., Lefferts, S., Nedbal, J. and Spear, R., Mat. Res. Soc. Symp. Proc. 476, 25 (1997).10.1557/PROC-476-25Google Scholar
5. Nakano, T. and Ohta, T., J. Electrochem. Soc., 142, 1303 (1995).10.1149/1.2044168Google Scholar
6. Hacker, N. P., Drage, J. S., Katsanes, R. and Sebahar, P., in Proc. 12th Int. VLSI Multilevel Interconnection Conf (1995) p. 138.Google Scholar