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A next generation TCO Material for display systems: Molybdenum doped Indium oxide thin films

Published online by Cambridge University Press:  01 February 2011

E. Elangovan ,
A Marques ,
R Martins  and
E Fortunato
E. Elangovan
Affiliation:
elankam29@yahoo.com, New University of Lisbon, Materials Research Center, CENIMAT/FCT/UNL, Campus de Caparica, Monte de Caparica, Setubal, 2829-516, Portugal, 00351 212948562; Extn. 11609, 00351 212948558
A Marques
Affiliation:
antoniojsm@mail.pt, New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
R Martins
Affiliation:
rm@uninova.pt, New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
E Fortunato
Affiliation:
elvira.fortunato@fct.unl.pt, New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
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Abstract

Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

Keywords

transparent conductorsputteringx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 936: Symposium L – Materials for Next-Generation Display Systems , 2006 , 0936-L01-01
Copyright
Copyright © Materials Research Society 2006

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References

1 Crawford, G. P, Flexible Flat Panel Displays, 1st ed. (John Wiley & Sons Ltd., England, 2005) chapter 1; (a) chapter 5.Google Scholar
2 Görrn, P., Saner, M., Meyer, J., Kr, M.öger, Becker, E., Johannes, H., Kowalsky, W., and Riedl, T., Adv. Mater. 18, 738 (2006).Google Scholar
3 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature 432, 488 (2004).Google Scholar
4 Meng, Y., Yang, X., Chen, H., Shen, J., Jiang, Y., Zhang, Z., and Hua, Z., Thin Solid Films 394, 219 (2001).Google Scholar
5 Huang, L., Li, X., Zhang, Q., Miao, W., Zhang, L., Yan, X., Zhang, Z., and Hua, Z., J. Vac. Sci. Technol. A 23, 1350 (2005).Google Scholar
6 Elangovan, E., Marques, A., Pimental, A., Martins, R., and Fortunato, E., Mater. Res. Soc. Symp. Proc., 905E, 0905–DD05 (2006).Google Scholar
7 Pankove, J.I, Optical Processes in Semiconductors, Prentice-Hall; NJ; pp. 34 (1971).Google Scholar
8 Sun, S.Y, Huang, J.L, and Lii, D.F, J. Vac. Sci. Technol. A 22, 1235 (2004); A.E. Delahoy, S.Y. Guo, C. Padurau, and A. Belkind, ibid., 22, 1697 (2004).Google Scholar