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NH3 as Nitrogen Source in MBE growth of GaN

Published online by Cambridge University Press:  21 February 2011

M. Kamp ,
M. Mayer ,
A. Pelzmann ,
A. Thies ,
H. Y. Chung ,
H. Sternschulte ,
O. Marti  and
K. J. Ebeling
M. Kamp
Affiliation:
Department of Optoelectronics
M. Mayer
Affiliation:
Department of Optoelectronics
A. Pelzmann
Affiliation:
Department of Optoelectronics
A. Thies
Affiliation:
Department of Optoelectronics
H. Y. Chung
Affiliation:
Department of Optoelectronics
H. Sternschulte
Affiliation:
Department of Semiconductor Physics
O. Marti
Affiliation:
Department of Experimental Physics, University of Ulm, D-89069 Ulm, Germany
K. J. Ebeling
Affiliation:
Department of Optoelectronics
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Abstract

We report on the growth of GaN in GSMBE using NH3 as nitrogen source. Special focus will be on the NH3 cracking, where we applied an On Surface Cracking technique (OSC). Using OSC we achieve photoluminescence linewidths as narrow as 5.5meV (5K) and mobilities of 220 cm2/Vs at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 135
Copyright
Copyright © Materials Research Society 1996

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References

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