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Nitride Laser Diodes With InGaN Based Mqw Structures

Published online by Cambridge University Press:  10 February 2011

Lisa Sugiura ,
Jobji Nishio ,
Masaaki Onomura ,
Shin-Ya Nunoue ,
Kazuhiko Itaya  and
Masayuki Ishikawa
Lisa Sugiura
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
Jobji Nishio
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
Masaaki Onomura
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
Shin-Ya Nunoue
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
Kazuhiko Itaya
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
Masayuki Ishikawa
Affiliation:
Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corp., 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japanlisa.sugiura@toshiba.co.jp
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Abstract

Advantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1157
Copyright
Copyright © Materials Research Society 1998

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