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Non-Radiative Recombination in a-Si:H

Published online by Cambridge University Press:  16 February 2011

M. Schubert ,
R. Stachowitz ,
R. Saleh  and
W. Fuhs
M. Schubert
Affiliation:
Fachbereich Physik und wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-35032 Marburg, Germany
R. Stachowitz
Affiliation:
Fachbereich Physik und wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-35032 Marburg, Germany
R. Saleh
Affiliation:
Fachbereich Physik und wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-35032 Marburg, Germany
W. Fuhs
Affiliation:
Fachbereich Physik und wissenschaftliches Zentrum für Materialwissenschaften, Universität Marburg, Renthof 5, D-35032 Marburg, Germany
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Abstract

Frequency-resolved photoluminescence spectroscopy (FRS) is used to study non-radiative recombination in a-Si:H using generation rates sufficiently small to garantee geminate recombination at low temperature. The quenching of the photoluminescence by a higher defect density ND and an increase of temperature influences the QFRS spectra differently: Whereas for increasing ND the quenching of the signal is more pronounced on the low frequency side raising temperature leads to a uniform decrease in the entire frequency range. The dependence of the lifetime distribution on ND is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 189
Copyright
Copyright © Materials Research Society 1994

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References

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