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Nonvolatile Carbon Nanotube Memory Device With Molecular Charge Storage

Published online by Cambridge University Press:  01 February 2011

Volker J. Sorger  and
Zhen Yao
Volker J. Sorger
Affiliation:
volker.sorger@mail.utexas.edu, University of Texas, Austin, Department of Physics, Center for Nano- and Molecular Science and Technology & Texas Materials Inst., 1 University Station C1600, Austin, Texas, 78712-0264, United States
Zhen Yao
Affiliation:
yao@physics.utexas.edu, University of Texas at Austin, Department of Physics, Center for Nano- and Molecular Science and Technology & Texas Materials Inst., 1 University Station C1600, Austin, Texas, 78712-0264, United States
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Abstract

Nanoscale, non-volatile, multi-bit memory devices have been fabricated consisting of carbon nanotube field-effect transistors (CNT-FETs) surrounded by redox active molecules (cobalt porphyrin). Charge was stored in the cobalt center atom of the molecule. Write and erase programming was carried out with back-gate pulses. By varying the back-gate amplitude multi-level memory operation was achieved. Programmed devices were read at zero gate voltage showing distinct logic ON and OFF states at room temperature for several hours. At low temperatures strong increase in retention time was observed and single-electron sensitivity was demonstrated. Charge stability tests show insignificant device change after 105 write and erase cycles.

Keywords

nanoscalememorydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 938: Symposium N – Molecular-Scale Electronics , 2006 , 0938-N07-07
Copyright
Copyright © Materials Research Society 2006

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