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Nonvolatile Resistive Switching Devices Based on Nanoscale Metal/Amorphous Silicon/Crystalline Silicon Junctions

Published online by Cambridge University Press:  01 February 2011

Sung Hyun Jo  and
Wei Lu
Sung Hyun Jo
Affiliation:
josung@umich.edu, University of Michigan, EECS, 1634 Mcintyre st., Ann Arbor, MI, 48105, United States, 734-709-2098
Wei Lu
Affiliation:
wluee@umich.edu, University of Michigan, EECS, Ann Arbor, MI, 48109, United States
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Abstract

M/a-Si:H/c-Si based nonvolatile resistive switching devices with active areas down to 50 nm×50 nm have been fabricated and explored. Close to 100% device yield was achieved without necessity of high voltage forming process. Both rectifying switching and non-rectifying switching were demonstrated in a controllable fashion. The potential for this structure as nanoscale nonvolatile memory devices was investigated in terms of scalability, retention time, endurance and switching speed. The device showed switching speed faster than 5 ns, endurance cycles more than 106 and retention time longer than 150 days without any degradation of stored data. The devices exhibit improved resistance switching ratio when scaled down.

Keywords

amorphousSimemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I04-05
Copyright
Copyright © Materials Research Society 2007

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