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Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
J. R. Lothian ,
S. J. Pearton ,
R. G. Wilson ,
J. R. LaRoche ,
J. W. Lee ,
D. Johnson  and
J. M. Zavada
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. R. Lothian
Affiliation:
Multiplex Inc., South Plainfield, NJ 07080
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. G. Wilson
Affiliation:
Charles Evans and Associates, Sunnyvale, CA 94086
J. R. LaRoche
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. W. Lee
Affiliation:
Plasma Therm inc., St. Petersburg, FL 33716
D. Johnson
Affiliation:
Plasma Therm inc., St. Petersburg, FL 33716
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Pk, NC27709
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Abstract

We demonstrated an in-situ dielectric film passivation technique by dividing a thick film deposition into many thin film (<40Å) depositions and incorporating the ion bombardment between the depositions. N2 was used for the plasma treatment to passivate the SiNx film and a well passivated and thermally stable SiNx was achieved with this process. The refractive index of N2 treated SiNx film only changed 0.3% when the SiNx film was heated up to 1000 °C and the film with a continuous deposition showed a 2.5% change. From the results of SIMS analysis, the N2 treated SiNx film showed a excellent thermal stability after heat up to 1000 °C. The etch rates of passivated SiNx film in BOE and diluted HF are ≤40 Å/min which is much slower than that of un-treated SiNx (135 Å/min).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 183
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Lanford, W. A. and Rand, M. J., J. Appl. Phys., 49, 2473(1978).Google Scholar
2. Stein, H. J., Wells, V. A., and Hampy, R. E., J. Electrochem. Soc., 126, 1750(1979).Google Scholar
3. Chow, R., Landoed, W. A., Wang, K. M., and Rosier, R., J. App. Phys., 53, 5630(1982).Google Scholar
4. Esaev, D. G., Efimov, V. M. and Shklyaew, A. A., Thin Solid Films, 221, 160(1992).Google Scholar
5. Gadiyak, G. V., J. Appl. Phys., 82, 5573(1997).Google Scholar
6. Sah, S. T., Solid-State Electron., 33, 147(1990).Google Scholar
7. Sun, R. C., Clemens, J. T. and Nelson, J. T., in Proc. IEEE Rel. Phys., 244(1980).Google Scholar
8. JW, Lee, K, MacKenzie, D, Johnson, RJ, Shul, SJ, Pearton, F, Ren, Solid State Electronics, 42, 1031(1998).Google Scholar
9. “Effect of ECR Plasma in the Luminescence Efficiency of InGaAs and InP,” Ren, F., Buckley, D., Lee, K., Pearton, S.J., Constantine, C., Hobson, W.S., Hamm, R.A. and Chao, P.C., Solid State Electronics 38, 2011(1995).Google Scholar
10. Ren, F., LaRoche, J., Anderson, T., Pearton, S. J., Lee, J. W., Johnson, D., Lothian, J. R., Lin, J., ShuL, R. J., and Wu, C. S., J Electrochemical Soc. Lett., 1, 279–281(1998).Google Scholar