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Novel Materials and Joinings for Power Electronics Module Packaging

Published online by Cambridge University Press:  21 March 2011

Eckhard Wolfgang ,
Gerhard Mitic ,
Guy Lefranc  and
Herbert Schwarzbauer
Eckhard Wolfgang
Affiliation:
Siemens AG, Corporate Technology, Power Electronics D-81730 Munich, Germany
Gerhard Mitic
Affiliation:
Siemens AG, Corporate Technology, Power Electronics D-81730 Munich, Germany
Guy Lefranc
Affiliation:
Siemens AG, Corporate Technology, Power Electronics D-81730 Munich, Germany
Herbert Schwarzbauer
Affiliation:
Siemens AG, Corporate Technology, Power Electronics D-81730 Munich, Germany
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Abstract

Power electronics modules consist of several layers of different materials according to their function. A base plate is necessary for mounting the module to the cooling unit, an insulating layer provides protection against high voltages, the power semiconductor chips with metal electrodes on both sides are used for switching currents, and finally passivation layers have to protect the chips against high electric fields and environmental impacts. The combination of semiconductors, metals and insulators and their different coefficients of thermal expansion leads to stresses and fatigue during temperature excursions. Some major trends require the use of new materials and joinings: higher voltages (up to 6.5 kV), higher currents (above 2000 A), and higher operating temperatures, e.g. in automotive applications (up to 200°C). To reduce the influence of the thermal mismatch between the base plate and the insulator (Alumina, AlN), metal matrix composites such as AlSiC have been used for several years in power modules. To minimize the partial discharge of the ceramics substrate, an amorphous coating (a-Si:H) was tested at high voltages up to 15 kV. A low-temperature joining technique based on silver powder processed under high pressure and at low temperatures works well at higher temperatures. Finally a concept for securing reliability is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 682: Symposium N – Microelectronics and Microsystems Packaging , 2001 , N5.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Eupec datasheet, www.eupec.comGoogle Scholar
2. Mitic, G., Degischer, H.P., Lefranc, G., Licht, T., Proc. IEEE IAS (2000)Google Scholar
3. Lefranc, G., Degischer, H.P., Sommer, H.P., Mitic, G., Proc. ICCM, 12 (1999)Google Scholar
4. Weissgaerber, T., Meyer, A., Schulz-Harder, J., Lefranc, G., Kurth, R., Proc. Materials Week, www.materialsweek.org (2000)Google Scholar
5. Lefranc, G., Proc Materials Week, Proc Materials Week, www.materilasweek.org (2000)Google Scholar
6. Ramminger, S., Türkes, P., Wachutka, G., Microelectronics Reliability 38, 1301 (1998)Google Scholar
7. Mehrotra, V., He, J., Dadkhah, M.S., Rugg, K., Shaw, M.C., Proc. ISPSD, 113 (1999)Google Scholar
8. Sommer, K.H., Spanke, R., Lefranc, G., Licht, T., Proc. EPE'97, 512 (1997)Google Scholar
9. Schwarzbauer, H. and Kuhnert, R., IEEE Trans. On Industry Appl. 27, 93 (1991)Google Scholar
10. Mitic, G., Lefranc, G., Licht, T., Proc. of IEEE IAS Conference 2001, (submitted)Google Scholar
11. McCluskey, P., Condra, L., Grzybowski, R.R., Torri, T.C., Fink, J., Advancing Microelectronics, 19 (1998)Google Scholar
12. McCluskey, P., Mensah, K., O'Connor, C., Gallo, A., Microelectronics Reliability 40, 1671 (2000)Google Scholar
13. Wolfgang, E., Proc PCIM Europe, 1 (1999)Google Scholar
14. Lefranc, G., Licht, T., Mitic, G., Wolfgang, E., Proc CIPS, VDE Verlag, ISBN 3-8007-2560-6 (2000)Google Scholar
15. Keskar, N., Trivedi, M., Shenai, K., Microelectronics Reliability, 1121 (1999)Google Scholar
16 Lall, P., Pecht, M., Hakim, E., Influence of temperature on microelectronics and system reliability: A physics of failure approach, (CRC Press, New York, NY, 1995)Google Scholar
17 Crook, D.L, IEEE IRPS 20, 2 (1990)Google Scholar
18 Berg, H. and Wolfgang, E., Microelectronics Reliability 38, 1353 (1998)Google Scholar
19 Franke, T. et al. , Microelectronics Reliability 38, 1361 (1998)Google Scholar
20 Zaiser, G., Sommer, R., Franke, T., Proc EPE ISBN 90-75815-04-2 (1999)Google Scholar
21 Franke, T. et al. , Proc EPE ISBN 90-75815-04-2 (1999)Google Scholar
22 Ciappa, M. and Fichtner, W., IEEE IRPS 30, 210 (2000)Google Scholar