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A Novel Method to Measure Poisson's Ratio of Thin Films

Published online by Cambridge University Press:  10 February 2011

V. Ziebart ,
O. Paul ,
U. Münch  and
H. Baltes
V. Ziebart
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
O. Paul
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
U. Münch
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
H. Baltes
Affiliation:
Physical Electronics Laboratory, HPT H6, ETH Zurich, CH-8093 Zurich, Switzerland
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Abstract

We report a novel method to measure Poisson's ratio v of compressively prestressed thin films. The method exploits a v-dependent mechanical instability transition of buckled long rectangular membranes under differential pressure. This allows to determine v with high accuracy, using a physical model of the plate instability. The method was used to extract v = 0.253±0.017 from 0.704±0.003 μim thick PECVD silicon nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 27
Copyright
Copyright © Materials Research Society 1998

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References

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