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Novel Morphologies of InAs Quantum Dot Growth on GaAs Surfaces Containing Nanostructures Formed by Droplet Epitaxy

Published online by Cambridge University Press:  01 February 2011

Jihoon Lee ,
Zh. M. Wang ,
B.L. Liang ,
K. Sablon ,
N. W. Strom  and
G. J. Salamo
Jihoon Lee
Affiliation:
jxl14@uark.edu, UNIV OF ARKANSAS, MICROEP, 226 Physics Building, MICROEP UNIV OF ARKANSAS, FAYETTEVILLE, AR, 72701, United States, 479-575-3169, 479- 575-4580
Zh. M. Wang
Affiliation:
zmwang@uark.edu, UNIVERSITY OF ARKANSAS, Department of Physics, Department of Physics, University of Arkansas, FAYETTEVILLE, AR, 72701, United States
B.L. Liang
Affiliation:
liang@uark.edu, UNIVERSITY OF ARKANSAS, MICROEP, 226 Physics Building, MICROEP UNIV OF ARKANSAS, FAYETTEVILLE, AR, 72701, United States
K. Sablon
Affiliation:
ksablon@uark.edu, UNIVERSITY OF ARKANSAS, MICROEP, 226 Physics Building, MICROEP UNIV OF ARKANSAS, FAYETTEVILLE, AR, 72701, United States
N. W. Strom
Affiliation:
nsgra5@gmail.com, UNIVERSITY OF ARKANSAS, MICROEP, 226 Physics Building, MICROEP UNIV OF ARKANSAS, FAYETTEVILLE, AR, 72701, United States
G. J. Salamo
Affiliation:
salamo@comp.uark.edu, UNIVERSITY OF ARKANSAS, Department of Physics, Department of Physics, University of Arkansas, FAYETTEVILLE, AR, 72701, United States
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Abstract

Self-assembled InAs quantum dot clusters (QDCs) and InGaAs QD molecules (QDMs) have been demonstrated through a growth technique called “droplet epitaxy” by molecular beam epitaxy (MBE). For QDCs, the size and density of QDs can be controlled with variation of InAs monolayer coverages. For QDMs, Ga contribution from GaAs mound with the interaction of InAs deposition resulted in various number of InGaAs QDs per GaAs mound, ranging from 2 to 6 (bi-QDMs to hexa-QDMs) depending on the specific InAs monolayer deposition. High step density on sidewall of GaAs mound and anisotropy of surface diffusion gave a rise to preferential formation of InAs and InGaAs QDs around GaAs mounds. This hybrid growth approach combining droplet epitaxy and typical QD growth is relatively simple and flexible and doesn't require further ex-situ surface preparation. This approach of QD arrangement can find applications in optoelectronics as well as physical study of QD interaction.

Keywords

quasicrystalIII-Vmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M08-02
Copyright
Copyright © Materials Research Society 2007

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