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Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics

Published online by Cambridge University Press:  22 May 2014

Samuel A. Orefuwa ,
Cheng-Yu Lai ,
Kevin Dobson ,
Chaoying Ni  and
Daniela Radu
Samuel A. Orefuwa
Affiliation:
Department of Chemistry, Delaware State University, 1200 N. DuPont Highway,Dover, DE, U.S.A.
Cheng-Yu Lai
Affiliation:
Department of Chemistry, Delaware State University, 1200 N. DuPont Highway,Dover, DE, U.S.A.
Kevin Dobson
Affiliation:
Institute of Energy Conversion, University of Delaware, 451 Wyoming Road, Newark, DE 19716, U.S.A.
Chaoying Ni
Affiliation:
University of Delaware, Newark, DE 19716, U.S.A.
Daniela Radu*
Affiliation:
Department of Chemistry, Delaware State University, 1200 N. DuPont Highway,Dover, DE, U.S.A.
*
*Corresponding author Email: dradur@desu.edu
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Abstract

Fe2SiS4 and Fe2GeS4 crystalline materials posses direct bandgaps of ∼1.55 and ∼1.4 eV respectively and an absorption coefficient larger than 105 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe2SiS4 or Fe2GeS4 have been reported to date. In the presented work, nanoprecursors to Fe2SiS4 and Fe2GeS4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe2SiS4 and Fe2GeS4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe2SiS4 and Fe2GeS4 as solar absorber material is presented.

Keywords

photovoltaicthin filmgrain size
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium E – Fundamentals of Gels and Self-Assembled Polymer Systems , 2014 , mrss14-1670-e02-04
Copyright
Copyright © Materials Research Society 2014 

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References

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