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Nuclear Radiation Detection Scintillators based on ZnSe(Te) crystals.

Published online by Cambridge University Press:  12 July 2011

Volodymyr D. Ryzhikov
Volodymyr D. Ryzhikov*
Affiliation:
Institute for Scintillation Materials of STC “Institute for Single Crystals” NAS of Ukraine, 60 Lenin Ave., Kharkov, 61001, Ukraine
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Abstract

We describe development of semiconductor scintillators (SCS) on the basis of AIIBVI compounds has bridged the gap in a series of “scintillator-photodiode” detectors used in modern multi-channel low-energy devices for visualization of hidden images (tomographs, introscopes). In accordance with the requirements of eventual applications, such SCS materials as ZnSe(Te) show the best matching of intrinsic radiation spectra to photosensitivity spectra of silicon photodiodes (PD) among the materials of similar kind. They are characterized by high radiation and thermal stability of their output parameters, as well as by high conversion efficiency. In this work, a thermodynamic model is described for interaction of isovalent dopants (IVD) with intrinsic point defects of AIIBVI semiconductor structures at different ratios of their charges, a decisive role of IVD is shown in formation of the luminescence centers, kinetics of solid-phase reactions and the role of a gas medium are considered under real preparation conditions of ZnSe(Te) scintillation crystals, and luminescence mechanisms in IVD-doped SCS are discussed.

Keywords

crystaldopantdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u04-07
Copyright
Copyright © Materials Research Society 2011

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References

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