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Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

Masami Nakata ,
Tatsuru Namikawa ,
Hajime Shirai ,
Jun-ichi Hanna  and
Isamu Shimizu
Masami Nakata
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan
Tatsuru Namikawa
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan
Jun-ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan
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Abstract

A close study was conducted on microcrystalline Silicon (μc-Si) prepared by PE-CVD (Plasma Enhanced CVD) from SiF4 with the assistance of atomic hydrogen. The atomic hydrogen played a major role in either making precursors, SiFnHm (n+m=3), by gas phase reactions with the fragments, SiFn (≤3), or constructing Si-network in the vicinity of the growing surface. Proper conditions of nucleation were markedly different from those of growth with respect to parameters, flow of atomic hydrogen and substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 481
Copyright
Copyright © Materials Research Society 1990

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References

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