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Nucleation and Growth Mechanisms in Hetero-Epitaxial Films

Published online by Cambridge University Press:  28 February 2011

J.A. Venables ,
J.S. Drucker ,
M. Krishnamurthy ,
G. Raynerd  and
T. Doust
J.A. Venables
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
J.S. Drucker
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
M. Krishnamurthy
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
G. Raynerd
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
T. Doust
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
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Abstract

Nucleation and growth mechanisms in the formation of heteroepitaxial films are reviewed. The various processes can be incorporated into rate equations to model the number density and size distribution of clusters.Recent work on extensions of this approach to include the effect of surface steps and other surface imperfections is highlighted.

The most important processes are being studied experimentally using a combination of surface-analytic and -microscopic techniques, based on SEM and STEM instrumentation. Recent examples are given in which nucleation densities, surface diffusion lengths and the effects of steps have been studied in the systems Ag/Si(lll) and Ge/Si(100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 93
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Kern, R., LeLay, G. and Metois, J.J., Current Topics in Materials Science 3, 135 (Ed Kaldis, E., North-Holland 1979) and refs quoted.Google Scholar
2. Venables, J.A., Spiller, G.D.T. and Hanbucken, M., Rept. Prog. Phys. 47, 399 (1984).Google Scholar
3. Proc. NATO-ASI on Kinetics of Ordering and Growth on Surfaces (Ed Lagally, M. G., Plenum 1990) in press.Google Scholar
4. Venables, J.A. and Bennett, P.A., Proc NATO-ARW on Evaluation of Advanced Semiconductor Materials by Electron Microscopy (Ed Cherns, D., Plenum 1990) B203, 306; J.A. Venables, T. Doust, J.S. Drucker and M. Krishnamurthy, in ref. 3, in press.Google Scholar
5. Venables, J.A., Phys.Rev. B36, 4153 (1987) and refs quoted.Google Scholar
6. Venables, J.A., Doust, T. and Kariotis, R., MRS Symp. 94, 3 (1987).Google Scholar
7. Doust, T., Metcalfe, F.L. and Venables, J.A., Ultramicroscopy 31, 116 (1989) and refs quoted.Google Scholar
8. Krishnamurthy, M., Drucker, J.S. and Venables, J.A., these proceedings.Google Scholar
9. Matthews, J.W., Epitaxial Growth, Parts A and B (Academic Press, 1975) especially chapters 5-8; See also ref. 12, and refs quoted.Google Scholar
10. Kawabata, H., Ueba, H. and Tatsuyama, C., J. Appl. Phys. 6.6, 634 (1989).Google Scholar
11. Copel, M., Reuter, M.C., Kaxiras, E. and Tromp, R.M., Phys. Rev. Lett. 63, 632 (1989).Google Scholar
12. Bean, J.C., MRS Symp. 91, 269 (1987); J.Vac.Sci.Tech. B4, 1427 (1986).Google Scholar
13. Metois, J.J. and Heyraud, J.C., Ultramicroscopy 31, 73 (1989).Google Scholar
14. Williams, E.D. and Bartelt, N.C., Ultramicroscopy 31, 36 (1989); N.C. Bartelt et al., J. Vac. Sci. Tech. A7, 1898 (1981Y.Google Scholar
15. Suliga, E. and Henzler, M., J. Phys C16 1543 (1983); J. Vac. Sci. Tech. A3, 1507 (1983).Google Scholar
16. Bauer, E., Mundschau, M., Swiech, W. and Telieps, W., Ultramlcroscopy 31, 49 (1989); see also paper in these proceedings.Google Scholar
17. Tanashiro, Y. and Takayanagi, K., Ultramicroscopy 31, 20 (1989).Google Scholar
18. Robins, J.L., Appl. Surf. Sci. 33/34, 379 (1988).Google Scholar
19. Norskov, J., Venables, J.A. and coworkers, work in progress.Google Scholar
20. Gates, A.D. and Robins, J.L., Surf. Sci. 191, 499 (1987).Google Scholar
21. Venables, J.A., Phil. Mag. 27, 693 (1973)Google Scholar
22. Lewis, B. and Anderson, J.C., Nucleation and Growth of Thin Films (Academic, New York, 1978).Google Scholar
23. Burton, W.K., Cabrera, N. and Frank, F.C., Phil.Trans.R.Soc A243, 299 (1951).Google Scholar
24. Schwoebel, R.L., J. Appl. Phys. 40, 614 (1969); G.S. Bales and A. Zangwill, Phys. Rev. B, in press; also paper in ref 3.Google Scholar
25. Clarke, S. and Vvedensky, D.D., Cohen, P.I., papers in ref 3, and refs quoted also a v. recent Phys. Rev. B. 26. J.H. Neave, P.J.Dobson, B.A.Joyce and J. Zhang, Appl. Phys. Lett. 47, 100 (1985); B.A.Joyce et al., Surf. Sci. 174, 1 (1986).Google Scholar
27. Lagally, M.G., Mo, Y-W., Kariotis, R., Swartzentruber, B.S. and Webb, M.B., in ref. 3, in press; Y-W. Mo et al., J. Vac. Sci. Tech. A8, 201 (1990), and refs. quoted, plus private communication.Google Scholar
28. Ichikawa, M., Doi, T, Ichihashi, M. and Hayakawa, K., Appl. Phys. Lett. 50, 1141 (1987).Google Scholar
29. Zinke-Allmang, M., Feldman, L.C. and Nakahara, S., Appl. Phys. Lett. 51, 975 (1987); paper in ref. 3 and refs. quoted.Google Scholar
30. Atwater, H.A. and Yang, C.M.. J. Appl. Phys. (1990) in press; MRS symp. 157, (1989) in press, and refs quoted.Google Scholar
31.See.g. Fan, W.C., Ignatiev, A., Huang, H. and Tong, S.Y., Phys. Rev. Lett. 62, 1516 (1989); 64, 492 (1990).Google Scholar
32. Chan, C.T. and Ho, K.M., Surf. Sci. 217, 403 (1989); Phys. Rev. Lett. 64, 491 (1990).Google Scholar
33. Raynerd, G., Doust, T., Hardiman, M. and Venables, J.A., work in progress.Google Scholar
34. Hanbucken, M., Futamoto, M. and Venables, J.A., Surf. Sci. 147, 433 (1984).Google Scholar
35. Lelay, G., Chauvet, A., Manneville, M. and Kern, R., Appl. Surf. Sci. 9, 190 (1981); S. Kono, T. Abukawa, N. Nakamura, and K. Anno, Jap. J. Appl. Phys. 28, L1278 (1989).Google Scholar
36. Gossmann, H.J. and Feldman, L.C., Surf. Sci. 155, 413 (1985).Google Scholar
37. Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990), and these proceedings.Google Scholar
38. Chadi, D.J., Ultramicroscopy 31, 1 (1989) and refs quoted.Google Scholar
39. Kariotis, R. et al. , work in progress.Google Scholar
40. Gossmann, H.J. and Fisanick, G.J., J.Vac. Sci. Tech. A6, 2037 (1988).Google Scholar