Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T09:51:12.530Z Has data issue: false hasContentIssue false
  • English
  • Français

Numerical Simulation of the Transient Photoconductivity in A-SI:H as a Function of the Excitation Density

Published online by Cambridge University Press:  15 February 2011

H. Feist  and
M. Kunst
H. Feist
Affiliation:
Hahn-Meitner-Institute, Dept. CS, Glienicker Str. 100,14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institute, Dept. CS, Glienicker Str. 100,14109 Berlin, Germany
Get access

Abstract

The dependence of the transient photoconductivity induced by pulsed excitation (TPC) on the excitation density is discussed with the help of numerical simulations. It is shown that recombination between excess mobile electrons and all excess holes (mainly localized) can explain the excitation density dependence of the TPC amplitude of standard a-Si:H at room temperature using a rate parameter kBB of 10−8cm3/s. This model leads to a decay faster than experimentally observed in the time range from 40ns to 1 μs. A variation of the recombination model is presented that gives a better fit for the longer time range still showing the correct excitation density dependence in the short time range. Moreover comparison of the simulations with experimental data yields limits for the parameters of the conduction band tail. In particular, the time necessary to establish a dynamic equilibrium of excess electrons between delocalized states in the conduction band and localized states in the tail appears to be very informative.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 227
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Orenstein, J., Kastner, M.A. and Vaninov, V., Phil. Mag. 46, 23 (1982).Google Scholar
2. Tiedjs, T., in Semiconductors and Semimetals 21C, edited by Pankove, J.I. (Academic Press, Orlando, 1984) p. 207.Google Scholar
3. Swiatkowski, C. and Kunst, M., Appl. Phys. A 61, 623 (1995).Google Scholar
4. Fox, L., Numerical Solutions of Ordinary and Partial Differential Equations (Pergamon Press, 1962) p. 24.Google Scholar
5. Haffer, C.M. and Kunst, M., Chem. Phys. Lett. 211, 203 (1993).Google Scholar
6. Swiatkowski, C., Thesis, T.U. Berlin, 1996.Google Scholar
7. Brüggemann, R., Solid State Phenomena 44–46, 505 (1995).Google Scholar