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Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

Published online by Cambridge University Press:  01 February 2011

Woo-Jin Nam ,
Kee-Chan Park ,
Sang-Hoon Jung ,
Soo-Jeong Park  and
Min-Koo Han
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Soo-Jeong Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

Incomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.8
Copyright
Copyright © Materials Research Society 2003

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References

1. Mimura, A., Ohwada, J.I., Hosokawa, Y., T. Suzuki Kawakami, H. and Miyata, K., IEEE Trans. Elec. Dev. 35, 418 (1988)Google Scholar
2. Park, K.C., Kim, J.S., Nam, W.J. and Han, M.K., Mater. Res. Soc. Spring Meeting (2002)Google Scholar
3. Moller, K.D., OPTICS, (University Science Books, Mill Valley, CA, 1988) pp. 172.Google Scholar
4. Tahkubo, Y. et al, Japan Display 89, pp. 584–587 (1989)Google Scholar