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Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at room Temperature

Published online by Cambridge University Press:  15 February 2011

Xiaofeng Gu ,
Hua Qin ,
Hai Lu ,
Jun Xu  and
Kunji Chen
Xiaofeng Gu
Affiliation:
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China, kjchen@netra.nju.edu.cn
Hua Qin
Affiliation:
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China, kjchen@netra.nju.edu.cn
Hai Lu
Affiliation:
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China, kjchen@netra.nju.edu.cn
Jun Xu
Affiliation:
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China, kjchen@netra.nju.edu.cn
Kunji Chen
Affiliation:
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China, kjchen@netra.nju.edu.cn
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Abstract

We report the fabrication and electrical characteristics of an ultrathin nanocrystalline-silicon/amorphous silicon oxide double barrier resonant tunneling diode. The cross-section high resolution TEM photographs indicate the layered structure and the crystallinity of nanocrystalline Si with an average grain size of 10 nm. In this prototype device, a series of reproducible conductance peaks have been observed as a function of the applied gate bias at room temperature. The real voltage spacing of 0.38V between the peaks is determined from an equivalent circuit. The results are in agreement with the theory of Coulomb blockade effect using 1.1 aF of capacitance in single Si nanocrystallite. We conclude that the observed behavior results from resonant tunneling, which is strongly influenced by Coulomb blockade effect, through the zero-dimensional states in the well isolated silicon quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 367
Copyright
Copyright © Materials Research Society 1997

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References

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