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Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

Published online by Cambridge University Press:  23 March 2011

Everett Crisman ,
Vladimir Vasilyev ,
Alvin Drehman  and
Richard Webster
Everett Crisman
Affiliation:
Dept. of Chemical Engineering, University of Rhode Island, Kingston, RI 02881, U.S.A
Vladimir Vasilyev
Affiliation:
Air Force Research Laboratory/RYHA, Hanscom AFB, MA 01731, U.S.A.
Alvin Drehman
Affiliation:
Air Force Research Laboratory/RYHA, Hanscom AFB, MA 01731, U.S.A.
Richard Webster
Affiliation:
Air Force Research Laboratory/RYHA, Hanscom AFB, MA 01731, U.S.A.
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Abstract

We have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Keywords

thin filmsputteringstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-26
Copyright
Copyright © Materials Research Society 2011

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References

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