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Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films

Published online by Cambridge University Press:  21 February 2011

P. J. Ding ,
B. Zheng ,
E. T. Eisenbraun ,
W. A. Lanford ,
A. E. Kaloyeros ,
S. Hymes  and
S. P. Murarka
P. J. Ding
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222
B. Zheng
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222
E. T. Eisenbraun
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222
A. E. Kaloyeros
Affiliation:
Department of Physics, University at Albany-SUNY, NY 12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Oxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen plasma reduction of bis(hexafluoroacetylacetonato) copper(II), Cu(hfa)2, precursor. Under identical experimental conditions, PA-CVD copper films oxidize more slowly than sputtered copper films. This decrease in oxidationis manifested both as a time delay at the beginning of the oxidation of the PA-CVD copper films and as a decrease in the rate of oxide growth at oxidation temperatures of 200ºC and below. The possivation appears to be caused by the hydrogen plasma present during depostion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 455
Copyright
Copyright © Materials Research Society 1993

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References

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