Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-10T08:34:25.585Z Has data issue: false hasContentIssue false

OES, LIF, and MS Studies of Silane, Disilane, and Chlorosilane Plasmas

Published online by Cambridge University Press:  28 February 2011

H. U. Lee
Affiliation:
Energy Conversion Devices, Inc., P.O.Box 5357, North Branch, N.J.08876
R. C. Ross
Affiliation:
Energy Conversion Devices, Inc., P.O.Box 5357, North Branch, N.J.08876
J. P. De Neufville
Affiliation:
Energy Conversion Devices, Inc., P.O.Box 5357, North Branch, N.J.08876
Get access

Abstract

Using optical emission spectroscopy (OES), mass spectrometry (MS), and laser-induced fluorescence (LIF), we are investigating a number of glow-discharge reactions as a function of RF power, flow rates, partial pressures, and H2 dilution under realistic thin-film deposition conditions.In this paper we report on the preliminary results of two studies:

  1. 1) The formation of radical and polymeric species in SiH4 and Si2H6 plasmas, and

  2. 2) The characterization of SiF4 + H2 plasmas and the detection of HSiCl and HSiF in the plasmas of SiH2Cl2 and SiH2F2, respectively.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lee, H.U., de Neufville, J.P., and Ovshinsky, S.R., J.Non-Cryst.Solids 59 & 60, 671 (1983); H.U.Lee, J.P.de Neufville, and S.R.Ovshinsky, J.Non-Cryst.Solids, 66, 39 (1984); Chem.Phys.Lett.99, 394 (1983).CrossRefGoogle Scholar
2. Ross, R.C. and Jaklik, J. Jr, J.Appl.Phys. 55, 3785 (1984).CrossRefGoogle Scholar
3. Kampas, F.J., in Semiconductors and Semimetals, ed.by Pankove, J.I. (Academic Press, New York, 1984) pp.153177.Google Scholar
4. Gallagher, A., in Plasma Synthesis and Etching of Electronic Materials, MRS Symp.Proc., Vol.38, pp.99110 (1985).Google Scholar
5. Haller, I., Appl.Phys.Lett. 37, 282 (1980).CrossRefGoogle Scholar
6. Turban, G., Catherine, Y., and Grolleau, B., Thin Solid Films 67, 309 (1980).CrossRefGoogle Scholar
7. S.R.Ovshinsky and A.Madan, U.S.Patent 4,226,898; Madan, A., Ovshinsky, S.R., and Benn, E., Philos.Mag.B 40, 259 (1979).CrossRefGoogle Scholar
8. Janai, M., Weil, R., and Pratt, B., Phys.Rev.B 31, 5311 (1985); M.Janai, L.Frey, R.Weil, and B.Pratt, Solid State Commun.48, 521 (1983); M.Janai, R.Weil, K.H.Levin, B.Pratt, R.Kalish, G.Braunstein, and M.Teicher, J.Appl.Phys.52, 3622 (1981).CrossRefGoogle Scholar
9. Matsuda, A., Matsumura, M., Nakagawa, K., Yamasaki, S., and Tanaka, K..J.de Physique 42, C4 (1981); A.Matsuda and K.Tanaka, Thin Solid Films 92, 171 (1982).Google Scholar
10. Morar, J.F., McFeely, F.R., Shinn, N.D., Landgren, G., and Himpsel, F.J., Appl.Phys.Lett. 45, 174 (1984).CrossRefGoogle Scholar
11. Senzer, S.N. and Lampe, F.W., J.Appl.Phys. 54, 3524 (1983).CrossRefGoogle Scholar
12. Reents, W.D. Jr and Mujsce, A.M., Int.J.Mass Spectrom.Ion Proc. 59, 65 (1984).CrossRefGoogle Scholar
13. Matsuda, A., Yagii, K., Kaga, T., and Tanaka, K., Jap.J.Appl.Phys. 23, L576 (1984).CrossRefGoogle Scholar
14. Ho, P. and Breiland, W.G., Appl.Phys.Lett. 43, 125 (1983).CrossRefGoogle Scholar
15. Augelli, V., Murri, R., and Alba, N., J.Appl.Phys. 54, 248 (1983).CrossRefGoogle Scholar
16. Bruno, G., Capezzuto, P., Cicala, G., and Cramarossa, F., Plasma Chem.& Plasma Proc. 6, XXX (1986) (to be published).CrossRefGoogle Scholar