Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-10T11:54:04.376Z Has data issue: false hasContentIssue false
  • English
  • Français

Ohmic and Highly Reflective Ag based contacts on p-GaN for Resonant Cavity Light Emitting Diodes

Published online by Cambridge University Press:  02 March 2011

V. Kumbham ,
S. Kuchibhatla ,
K. Lee ,
L.E. Rodak ,
V. Narang ,
D. Korakakis  and
L.A. Hornak
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
S. Kuchibhatla
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
L.E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
V. Narang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506, USA
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
L.A. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown ,WV 26506
Get access

Abstract

Low resistance and high reflectance ohmic contacts on p-type GaN were achieved using an Ag-based metallization scheme. The ohmic nature of the contacts can be obtained by annealing the contacts in an O2 ambient. However, Ag based contacts degrade due to agglomeration of Ag when annealed above 400 oC [1]. In this work a Ni (1 nm)/Ag (150 nm)/Pt (50 nm)/Ni (20 nm)/Au (50 nm) metallization stack is investigated to reduce Ag agglomeration. The inclusion of platinum as a diffusion barrier is expected to suppress excess oxygen diffusion into the Ag films thereby preventing Ag agglomeration and can also provide high thermal stability when compared to other metallization schemes. The reflectivity of this kind of metallization scheme is around 85-90 % in the wavelength range of 400-600 nm making it suitable for blue and green LEDs, with a specific contact resistivity value comparable to other well developed contacts to p-GaN.

Keywords

barrier layerchemical vapor deposition (CVD) (deposition)molecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g11-11
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Son, Jun Ho, Song, Yang Hee, Yu, Hak Ki, and Lee, Jong-Lam, Appl. Phys. Lett., 95, 062108 (2009).Google Scholar
2. Huang, Shih-Yung, Horng, Ray-Hua, Tsai, Yu-Ju, Lin, Po-Rung, Wang, Wei-Kai, Feng, Zhe Chuan, Wuu, Dong-Sing, Semicond. Sci. Technol. 25, 035013 (2010).Google Scholar
3. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys., 86, 1 (1999).Google Scholar
4. Jang, Ho Won, Son, Jun Ho, and Lee, Jong-Lam, Journal of the Electrochemical Society, 155 (8) H563–H568 (2008).Google Scholar
5. Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R., and Wang, W. N., Appl. Phys. Lett., 83, 3677 (2003).Google Scholar
6. Song, J. O., Kim, K.-K., Park, S.-J. and Seong, T.-Y., Appl. Phys. Lett., 83, 479 (2003).Google Scholar
7. Jung, S.-P., Ullery, D., Lin, C.-H., Lee, H. P., Lim, J.-H., Hwang, D.-K., Kim, J.-Y., Yang, E.-J. and Park, S.-J., Appl. Phys. Lett., 87, 181107 (2005).Google Scholar
8. Pan, S.-M., Tu, R.-C., Fan, Y.-M., Yeh, R.-C. and Hsu, J.-T., IEEE Photon. Technol. Lett., 15, 646 (2003).Google Scholar
9. Lee, J.-R., Na, S.-I., Jeong, J.-H., Lee, S.-N., Jang, J.-S., Lee, S.-H., Jung, J.-J., Song, J.-O., Seong, T.-Y. and Park, S.-J., J. Electrochem. Soc., 152, G92 (2005).Google Scholar
10. Rajagopal Reddy, V., Kim, S.-H., Song, J.-O. and Seong, T.-Y., Solid-State Electron, 48, 1563 (2004).Google Scholar
11. Jang, J.-S., Park, S.-J. and Seong, T.-Y., Appl. Phys. Lett., 76, 2898 (2000).Google Scholar
12. Narayan, J., Wang, H., Oh, T.-H., Choi, H. K., and Fan, J. C. C., Appl. Phys. Lett., 81, 3978 (2002).Google Scholar
13. Jang, H. W., Kim, S. Y., and Lee, J.-L., J. Appl. Phys., 94, 1748 (2003).Google Scholar
14. Oh, M.-S., Hwang, D.-K., Lim, J.-H., Kang, C.-G. and Park, S.-J., Appl. Phys. Lett., 89, 042107 (2006).Google Scholar