Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-29T23:45:19.158Z Has data issue: false hasContentIssue false
  • English
  • Français

On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

Published online by Cambridge University Press:  21 February 2011

A.E. Wickenden ,
D.K. Gaskill ,
D.D. Koleske ,
K. Doverspike ,
D.S. Simons  and
P.H. Chi
A.E. Wickenden
Affiliation:
Naval Research Laboratory, Laboratory for Advanced Material Synthesis, Washington, D.C. 20375
D.K. Gaskill
Affiliation:
Naval Research Laboratory, Laboratory for Advanced Material Synthesis, Washington, D.C. 20375
D.D. Koleske
Affiliation:
Naval Research Laboratory, Laboratory for Advanced Material Synthesis, Washington, D.C. 20375
K. Doverspike
Affiliation:
Currently at Hewlett-Packard, San Jose, CA 951311
D.S. Simons
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
P.H. Chi
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
Get access

Abstract

A comparison between 300 K electron transport data for state-of-the-art wurtzite GaN grown on sapphire substrates and corresponding theoretical calculations shows a large difference, with experimental mobility less than the predicted mobility for a given carrier concentration. The comparison seems to imply that GaN films are greatly compensated, but the discrepancy may also be due to the poorly known values of the materials parameters used in the calculations. In this work, recent analysis of transport and SIMS measurements on silicon-doped GaN films are shown to imply that the compensation, NA/ND, is less than 0.3. In addition, the determination of an activation energy of 34 meV in a GaN film doped to a level of 6×1016 cm−3 suggests either that a second, native donor exists in the doped films at a level of between 6×1017 cm−3 and 1×1017 cm−3, or that the activation energy of Si in GaN is dependent on the concentration, being influenced by impurity banding or some other physical effect. GaN films grown without silicon doping are highly resistive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 679
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Doverspike, K., Wickenden, A.E., Binari, S.C., Gaskill, D.K. and Freitas, J.A. Jr., to be published in Topical Workshop on HI-V Nitrides, edited by Onabe, K., Fujishiro, S. and Morkoc, H., Nagoya, Japan, 1995.Google Scholar
2 Rowland, L.B., Doverspike, K., Giordana, A., Fatemi, M., Gaskill, D.K., Skowronski, M. and Freitas, J.A. Jr., Silicon Carbide and Related Materials, ed. Spencer, M.G., Devaty, R.P., Edmond, J.A., Khan, M.A., Kaplan, R. and Rahman, M. (Bristol: Institute of Physics, 1994), p. 429.Google Scholar
3 Wickenden, A.E., Rowland, L.B., Doverspike, K., Freitas, J.A. Jr., Simons, D.S. and Chi, P.H., J. Elect. Mat., 24 (11), 1547 (1995).Google Scholar
4 Semiconductor Statistics. Blakemore, J.S. (Pergamon Press, New York, 1962).Google Scholar
5 This value of the Hall scattering factor is an average of the calculation in Rode, D.L., Phys. Stat. Solidi B, 55, 687 (1973).Google Scholar
6 Gaskill, D.K., Wickenden, A.E., Doverspike, K., Tadayon, B. and Rowland, L.B., J. Elect. Mat. 24(11), 1525 (1995).Google Scholar
7 Hacke, P., Maekawa, A., Koide, N., Hiramatsu, K. and Sawaki, N., Jpn. J. Appl. Phys. 33(Part. 1, No. 12A), 6443–6447 (1994).Google Scholar
8 Wang, Y.J., Kaplan, R., Ng, H.K., Doverspike, K., Gaskill, D.K., Ikedo, T., Akasaki, I. and Amano, H., presented at the Fall MRS Meeting, Boston, MA, 1995.Google Scholar
9 Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
10 Meyer, B.K., Volm, D., Graber, A., Alt, H.C., Detchprohm, T., Amano, A. and Akasaki, I., Sol. St. Com. 95(9), 597 (1995).Google Scholar
11 Boguslawski, P., Briggs, E.L. and Bernholc, J., Phys. Rev. B, 51(23), 17255 (1995).Google Scholar