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On the dynamics of InGaN dot formation by RF-MBE growth

Published online by Cambridge University Press:  01 February 2011

Tomohiro Yamaguchi ,
Sven Einfeldt ,
Stephan Figge ,
Carsten Kruse ,
Claudia Roder  and
Detlef Hommel
Tomohiro Yamaguchi
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Sven Einfeldt
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Stephan Figge
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Carsten Kruse
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Claudia Roder
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Detlef Hommel
Affiliation:
Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
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Abstract

The growth of InGaN on GaN (0001) by plasma-assisted molecular beam epitaxy was investigated with special focus on the dynamics of the formation of the dots. A metastable 2D growth regime, where the surface changes from smooth to rough by thermal treatment during growth interruption, existed previous to the 2D-3D transition. Both small regular-shaped dots and large irregular-shaped islands were observed. The large islands were suppressed by choosing correct growth conditions. The critical thickness for the transition from 2D to 3D growth also depended on the growth conditions. The growth of GaN capping layer to cover InGaN dot-structure was also attempted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E2.2
Copyright
Copyright © Materials Research Society 2005

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References

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