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On the interface quality of MIS structures fabricated from Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5−Ta2O5−Nb2O5 dielectric thin films

Published online by Cambridge University Press:  01 February 2011

S. Dueñas ,
H. Castán ,
H. García ,
J. Barbolla ,
K. Kukli ,
M. Ritala  and
M. Leskelä
S. Dueñas
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
H. Castán
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
H. García
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
J. Barbolla
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
K. Kukli
Affiliation:
University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014 Helsinki, Finland. University of Tartu, Institute of Experimental Physics and Technology, Tähe 4, EE-51010 Tartu, Estonia.
M. Ritala
Affiliation:
University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014 Helsinki, Finland.
M. Leskelä
Affiliation:
University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014 Helsinki, Finland.
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Abstract

A study of metal-insulator-semiconductor (MIS) structures based on atomic layer deposited HfO2, Ta2O5 and Nb2O5−Ta2O5−Nb2O5 thin films is presented. Our attention was focussed on interface quality and defect density in the dielectric. Interface states as well as defects inside the insulator bulk were measured by using capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and conductance transient (G-t) techniques. Nb2O5−Ta2O5−Nb2O5 based capacitors exhibit the highest interface state density, whereas the minimum is obtained for HfO2. Conductance transients are not observed in Al/HfO2/SiO2/Si stacks, thus indicating that disordered induced gap states (DIGS) are not present in these structures. We also observed that post-metallization annealing in forming gas diminishes the trap interface density at the expense of increasing DIGS in the Al/HfO2/Si cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.18
Copyright
Copyright © Materials Research Society 2004

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References

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