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On the “Life” of {113} Defects

Published online by Cambridge University Press:  17 March 2011

N. Cherkashin ,
P. Calvo ,
F. Cristiano ,
B. de Mauduit  and
A. Claverie
N. Cherkashin
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
P. Calvo
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
F. Cristiano
Affiliation:
LAAS-CNRS, 7 av. du Colonel Roche, Toulouse F-31077, France
B. de Mauduit
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
A. Claverie
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France
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Abstract

In this paper, we present a new set of conditions which can be used for imaging {113} defects. These conditions have the advantage of allowing the simultaneous imaging of all the variants of the defects. They can be used for building up accurate size-histograms or for checking the occurrence of the different variants. Making use of these conditions, we revisit the well- known experiments of the dissolution of the {113} defects and pinpoint some specific features of defect evolution during annealing which were not evidenced in previous works. The new results are discussed and are definitely found to be well-explained in the framework of a non- conservative Ostwald ripening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C3.7
Copyright
Copyright © Materials Research Society 2004

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References

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