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On the Manipulation of Nanoscale Self-Assembly by Elastic Field

Published online by Cambridge University Press:  01 February 2011

Y.F. Gao
Y.F. Gao*
Affiliation:
Division of Engineering, Brown University, Providence, RI 02920, U.S.A.
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Abstract

Morphological and compositional self-assembly can be manipulated by the long-range elastic field. This paper gives a universal formulation that determines the dependence of energetically favored orientation of those self-assembled structures on the elastic interaction. Elasticity anisotropy can lead to symmetry breaking and herringbone structures. A layered substrate can tune the feature size by modulus mismatch, or tune the orientation if the layers have different orientation preference, or guide the self-assembly by embedded structures. A closed-form result is derived for elastically isotropic layers by using Dundurs parameters. The self-assembled structures can also be affected by a nonuniform residual stress field or external force field. Higher order (nonlinear) perturbation theory, coupling between morphology and composition, and other issues are also addressed in the discussion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T9.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Kim, K.-S., Hurtado, J. A. and Tan, H., Phys. Rev. Lett. 83, 3872–3875 (1999).Google Scholar
2. Gao, Y. F., Int. J. Solids Struct. 40, 6429–6444 (2003).Google Scholar
3. Gao, Y. F., unpublished results (2003).Google Scholar
4. Suo, Z. and Lu, W., J. Mech. Phys. Solids 48, 211–232 (2000).Google Scholar
5. Gao, Y. F., Lu, W. and Suo, Z., Acta Mater. 50, 2297–2308 (2002).Google Scholar
6. Gao, Y. F. and Suo, Z., J. Mech. Phys. Solids 51, 147–167 (2003).Google Scholar
7. Chen, X. and Hutchinson, J. W., J. Appl. Mech. (2003) (in press).Google Scholar
8. Zhang, Y. W., Bower, A. F. and Liu, P., Thin Solid Films 424, 9–14 (2003).Google Scholar
9. Spencer, B. J., Voorhees, P. W., Davis, S. H., J. Appl. Phys. 73, 4955–4970 (1993).Google Scholar
10. Gao, Y. F. and Suo, Z., J. Appl. Phys. 93, 4276–4282 (2003).Google Scholar
11. Glas, F., Phys. Rev. B 55, 11277–11286 (1997).Google Scholar
12. Kukta, R. V., Bhattacharya, K., J. Mech. Phys. Solids 50, 615–649 (2002)Google Scholar